Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

  • Hui Cai
  • , Bin Chen
  • , Gang Wang
  • , Emmanuel Soignard
  • , Afsaneh Khosravi
  • , Marco Manca
  • , Xavier Marie
  • , Shery L.Y. Chang
  • , Bernhard Urbaszek
  • , Sefaattin Tongay*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number1605551
JournalAdvanced Materials
Volume29
Issue number8
DOIs
Publication statusPublished - Feb 2017
Externally publishedYes

Keywords

  • gallium telluride
  • physical vapor transport
  • pseudo-1D materials

Cite this