Synthesis of boron carbide films by ion beam sputtering

Hai Ying Chen; Jing Wang; Hai Yang; Wen Zhi Li; Heng De Li

doi:10.1016/S0257-8972(00)00599-5

Synthesis of boron carbide films by ion beam sputtering

Hai Ying Chen, Jing Wang^*, Hai Yang, Wen Zhi Li, Heng De Li

^*Corresponding author for this work

Tsinghua University

Research output: Contribution to journal › Conference article › peer-review

29 Citations (Scopus)

Abstract

Ion beam sputtering deposition technique was employed to prepare boron carbide (B₄C) films at different substrate temperature. The structure and mechanical properties of the B₄C films have been studied over the substrate temperature range of 50-350°C in order to study the temperature effect. Infrared spectroscopy, Auger electron spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy were used to evaluate the structural properties. The formation of B₄C was found to strongly depend on the deposition temperature. It was shown that a higher deposition temperature was beneficial for the boron carbide synthesis. Hardness of these films was also thoroughly studied by micro-indentation facility. The hardness increased and reached a very high value of 43 GPa at a substrate temperature of 350°C. (C) 2000 Elsevier Science S.A. All rights reserved.

Original language	English
Pages (from-to)	329-333
Number of pages	5
Journal	Surface and Coatings Technology
Volume	128-129
DOIs	https://doi.org/10.1016/S0257-8972(00)00599-5
Publication status	Published - 1 Jun 2000
Externally published	Yes
Event	The 11th International Conference on Surface Modification of Metals by Ion Beams (SMMIB-99) - Beijing, China Duration: 19 Sept 1999 → 24 Sept 1999

Keywords

Boron carbide
Hardness
Ion beam sputtering
Thin films

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10.1016/S0257-8972(00)00599-5

Cite this

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title = "Synthesis of boron carbide films by ion beam sputtering",

abstract = "Ion beam sputtering deposition technique was employed to prepare boron carbide (B4C) films at different substrate temperature. The structure and mechanical properties of the B4C films have been studied over the substrate temperature range of 50-350°C in order to study the temperature effect. Infrared spectroscopy, Auger electron spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy were used to evaluate the structural properties. The formation of B4C was found to strongly depend on the deposition temperature. It was shown that a higher deposition temperature was beneficial for the boron carbide synthesis. Hardness of these films was also thoroughly studied by micro-indentation facility. The hardness increased and reached a very high value of 43 GPa at a substrate temperature of 350°C. (C) 2000 Elsevier Science S.A. All rights reserved.",

keywords = "Boron carbide, Hardness, Ion beam sputtering, Thin films",

author = "Chen, {Hai Ying} and Jing Wang and Hai Yang and Li, {Wen Zhi} and Li, {Heng De}",

year = "2000",

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doi = "10.1016/S0257-8972(00)00599-5",

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TY - JOUR

T1 - Synthesis of boron carbide films by ion beam sputtering

AU - Chen, Hai Ying

AU - Wang, Jing

AU - Yang, Hai

AU - Li, Wen Zhi

AU - Li, Heng De

PY - 2000/6/1

Y1 - 2000/6/1

N2 - Ion beam sputtering deposition technique was employed to prepare boron carbide (B4C) films at different substrate temperature. The structure and mechanical properties of the B4C films have been studied over the substrate temperature range of 50-350°C in order to study the temperature effect. Infrared spectroscopy, Auger electron spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy were used to evaluate the structural properties. The formation of B4C was found to strongly depend on the deposition temperature. It was shown that a higher deposition temperature was beneficial for the boron carbide synthesis. Hardness of these films was also thoroughly studied by micro-indentation facility. The hardness increased and reached a very high value of 43 GPa at a substrate temperature of 350°C. (C) 2000 Elsevier Science S.A. All rights reserved.

AB - Ion beam sputtering deposition technique was employed to prepare boron carbide (B4C) films at different substrate temperature. The structure and mechanical properties of the B4C films have been studied over the substrate temperature range of 50-350°C in order to study the temperature effect. Infrared spectroscopy, Auger electron spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy were used to evaluate the structural properties. The formation of B4C was found to strongly depend on the deposition temperature. It was shown that a higher deposition temperature was beneficial for the boron carbide synthesis. Hardness of these films was also thoroughly studied by micro-indentation facility. The hardness increased and reached a very high value of 43 GPa at a substrate temperature of 350°C. (C) 2000 Elsevier Science S.A. All rights reserved.

KW - Boron carbide

KW - Hardness

KW - Ion beam sputtering

KW - Thin films

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SN - 0257-8972

VL - 128-129

SP - 329

EP - 333

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

T2 - The 11th International Conference on Surface Modification of Metals by Ion Beams (SMMIB-99)

Y2 - 19 September 1999 through 24 September 1999

ER -

Synthesis of boron carbide films by ion beam sputtering

Abstract

Keywords

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