Abstract
β-GaN nanocrystalline have been successfully synthesized from the nitridation of GaP nanocrystalline at low temperatures by gas-phase chemical reaction. The starting GaP nanocrystalline has a large specific surface and a high reactivity that can reduce remarkably the difficulty of nitridation. The results of GaP nanocrystalline in N2 at different heating rates support the fact that β-GaN nanocrystalline can form in GaP nanocrystalline via N-P metathesis gas-phase chemical mechanism. The mechanism is different when different heating rate was used. This method is very simple and is used generally to synthesize β-GaN nanoparticles or nanorods.
Original language | English |
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Pages (from-to) | 2267-2271 |
Number of pages | 5 |
Journal | Wuli Xuebao/Acta Physica Sinica |
Volume | 54 |
Issue number | 5 |
Publication status | Published - May 2005 |
Keywords
- Cubic structure
- Gallium nitride
- Nanocrystalline