Abstract
Nearly stoichiometric CeN film is synthesized on a Re(0001) substrate in an ultrahigh vacuum system involving highly active N atoms in the growth process, generated by thermal decomposition of NH 3 by use of a hot tungsten filament. The electronic structure of the CeN film as prepared is equivalent to that of a single crystal observed by in situ Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). AES and XPS investigations show that CeN film is directly oxidized to CeO 2 after exposure to O 2 at room temperature. However, CeN changes into Ce 2O 3 after annealing in ∼10 -6 mbar of O 2 atmosphere at elevated temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 4953-4958 |
| Number of pages | 6 |
| Journal | Journal of Physical Chemistry B |
| Volume | 109 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 24 Mar 2005 |
| Externally published | Yes |
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