Synthesis and electronic devices of atom-Thin transition metal dichalcogenides

Jiadong Zhou; R. Govindan Kutty; Lixing Kang; Xiaowei Wang; Zheng Liu

doi:10.1109/VLSI-TSA.2019.8804700

Synthesis and electronic devices of atom-Thin transition metal dichalcogenides

Jiadong Zhou
, R. Govindan Kutty
, Lixing Kang
, Xiaowei Wang
, Zheng Liu^*

^*Corresponding author for this work

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrated a universal bottom-up method to produce more than 40 different species of atom-Thin, large-scale and high-quality two-dimensional (2D) crystals (Figure 1) [1]. In the last decade of 2D material research, only a few species such as graphene, h-BN and MoS2 can be directly produced from bottom-up techniques. The difficulty in producing a wide range of 2D materials that are theoretically predicted stem from the precise control of the mass flux and growth rate.

Original language	English
Title of host publication	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728109428
DOIs	https://doi.org/10.1109/VLSI-TSA.2019.8804700
Publication status	Published - Apr 2019
Externally published	Yes
Event	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 - Hsinchu, Taiwan, Province of China Duration: 22 Apr 2019 → 25 Apr 2019

Publication series

Name	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

Conference

Conference	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	22/04/19 → 25/04/19

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10.1109/VLSI-TSA.2019.8804700

Cite this

Zhou, J., Kutty, R. G., Kang, L., Wang, X., & Liu, Z. (2019). Synthesis and electronic devices of atom-Thin transition metal dichalcogenides. In 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 Article 8804700 (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2019.8804700

Zhou, Jiadong ; Kutty, R. Govindan ; Kang, Lixing et al. / Synthesis and electronic devices of atom-Thin transition metal dichalcogenides. 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

@inproceedings{5d8474aa32c04b309c3e7bd3514327e8,

title = "Synthesis and electronic devices of atom-Thin transition metal dichalcogenides",

abstract = "We demonstrated a universal bottom-up method to produce more than 40 different species of atom-Thin, large-scale and high-quality two-dimensional (2D) crystals (Figure 1) [1]. In the last decade of 2D material research, only a few species such as graphene, h-BN and MoS2 can be directly produced from bottom-up techniques. The difficulty in producing a wide range of 2D materials that are theoretically predicted stem from the precise control of the mass flux and growth rate.",

author = "Jiadong Zhou and Kutty, \{R. Govindan\} and Lixing Kang and Xiaowei Wang and Zheng Liu",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 ; Conference date: 22-04-2019 Through 25-04-2019",

year = "2019",

month = apr,

doi = "10.1109/VLSI-TSA.2019.8804700",

language = "English",

series = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019",

address = "United States",

}

Zhou, J, Kutty, RG, Kang, L, Wang, X & Liu, Z 2019, Synthesis and electronic devices of atom-Thin transition metal dichalcogenides. in 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019., 8804700, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019, Institute of Electrical and Electronics Engineers Inc., 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019, Hsinchu, Taiwan, Province of China, 22/04/19. https://doi.org/10.1109/VLSI-TSA.2019.8804700

Synthesis and electronic devices of atom-Thin transition metal dichalcogenides. / Zhou, Jiadong; Kutty, R. Govindan; Kang, Lixing et al.
2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8804700 (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Zhou, Jiadong

AU - Kutty, R. Govindan

AU - Kang, Lixing

AU - Wang, Xiaowei

AU - Liu, Zheng

PY - 2019/4

Y1 - 2019/4

N2 - We demonstrated a universal bottom-up method to produce more than 40 different species of atom-Thin, large-scale and high-quality two-dimensional (2D) crystals (Figure 1) [1]. In the last decade of 2D material research, only a few species such as graphene, h-BN and MoS2 can be directly produced from bottom-up techniques. The difficulty in producing a wide range of 2D materials that are theoretically predicted stem from the precise control of the mass flux and growth rate.

AB - We demonstrated a universal bottom-up method to produce more than 40 different species of atom-Thin, large-scale and high-quality two-dimensional (2D) crystals (Figure 1) [1]. In the last decade of 2D material research, only a few species such as graphene, h-BN and MoS2 can be directly produced from bottom-up techniques. The difficulty in producing a wide range of 2D materials that are theoretically predicted stem from the precise control of the mass flux and growth rate.

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DO - 10.1109/VLSI-TSA.2019.8804700

M3 - Conference contribution

AN - SCOPUS:85072121191

T3 - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

BT - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

Y2 - 22 April 2019 through 25 April 2019

ER -

Zhou J, Kutty RG, Kang L, Wang X, Liu Z. Synthesis and electronic devices of atom-Thin transition metal dichalcogenides. In 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8804700. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019). doi: 10.1109/VLSI-TSA.2019.8804700

Synthesis and electronic devices of atom-Thin transition metal dichalcogenides

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