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Subsolidus phase relations of the Cu-Ga-N system

  • Y. Zhang
  • , J. B. Li*
  • , J. K. Liang
  • , Q. Zhang
  • , B. J. Sun
  • , Y. G. Xiao
  • , G. H. Rao
  • *Corresponding author for this work
  • CAS - Institute of Physics
  • CAS - International Center for Material Physics

Research output: Contribution to journalArticlepeer-review

Abstract

The subsolidus phase relations of the Cu-Ga-N system are studied by X-ray powder diffraction. The phase relations of the binary Cu-Ga system are checked firstly. θ-CuGa2 which belongs to the tetragonal system is determined to be a stoichiometric compound and its thermal expansion is measured by temperature-dependent X-ray powder diffraction from 93 to 523 K. The linear temperature dependences of the expansion coefficients along the a- and c-axis and volume coefficients are obtained, αa = (1.97349 - 3.84678 × 10-5T) × 10-5, αc = (2.00261 - 3.96007 × 10-5T) × 10-5 and αV = (6.01498 - 3.49098 × 10-4T) × 10-5, respectively. No ternary compound is found in the Cu-Ga-N system. Cu and its alloys could have some reaction with GaN under the present experimental condition.

Original languageEnglish
Pages (from-to)158-164
Number of pages7
JournalJournal of Alloys and Compounds
Volume438
Issue number1-2
DOIs
Publication statusPublished - 12 Jul 2007
Externally publishedYes

Keywords

  • Nitride materials
  • Phase diagram
  • Semiconductors
  • X-ray diffraction

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