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Study on the near field of semiconductor laser by using scanning near field optical microscope

  • Chunqing Gao*
  • , Norbert Reng
  • *Corresponding author for this work
  • Beijing Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

The near field of a semiconductor laser was measured by using a Scanning Near Field Optical Microscope (SNOM). The near field emission was recorded during the scanning of the fiber tip above the facet of the semiconductor laser at a distance less than 20 nm. By controlling the shear force, the topography of the facet was recorded simultaneously. The waist radius, divergence and M2-factor of the semiconductor laser were obtained by measuring the beam images in different positions along propagation.

Original languageEnglish
Pages (from-to)303-307
Number of pages5
JournalChinese Journal of Lasers B (English Edition)
VolumeB9
Issue number4
Publication statusPublished - Aug 2000

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