Abstract
The near field of a semiconductor laser was measured by using a Scanning Near Field Optical Microscope (SNOM). The near field emission was recorded during the scanning of the fiber tip above the facet of the semiconductor laser at a distance less than 20 nm. By controlling the shear force, the topography of the facet was recorded simultaneously. The waist radius, divergence and M2-factor of the semiconductor laser were obtained by measuring the beam images in different positions along propagation.
| Original language | English |
|---|---|
| Pages (from-to) | 303-307 |
| Number of pages | 5 |
| Journal | Chinese Journal of Lasers B (English Edition) |
| Volume | B9 |
| Issue number | 4 |
| Publication status | Published - Aug 2000 |
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