Study on the facet effect in LEC-GaSb single crystals

Weimin Dong, Jun Jiang, Qianwen Peng, Chengao Liu, Deliang Chu, Biwen Duan, Henghao Feng, Jin Yang, Wei Guo, Jincheng Kong*, Jun Zhao

*Corresponding author for this work

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Abstract

The “facet effect” had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Te-doped 〈1 1 1〉 and 〈1 0 0〉 GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of 〈1 1 1〉 GaSb and the edge facets of 〈1 0 0〉 GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared transmittance differences, and epitaxial film defects caused by the “facet effect” were comprehensively analyzed. The influence of the shoulder angle on the edge facets of 〈1 0 0〉 GaSb and the size differences of edge facets between the Ga-face and Sb-face were studied.

Original languageEnglish
Article number127706
JournalJournal of Crystal Growth
Volume636
DOIs
Publication statusPublished - 15 Jun 2024

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