Study on the facet effect in LEC-GaSb single crystals

Weimin Dong; Jun Jiang; Qianwen Peng; Chengao Liu; Deliang Chu; Biwen Duan; Henghao Feng; Jin Yang; Wei Guo; Jincheng Kong; Jun Zhao

doi:10.1016/j.jcrysgro.2024.127706

Study on the facet effect in LEC-GaSb single crystals

Weimin Dong, Jun Jiang, Qianwen Peng, Chengao Liu, Deliang Chu, Biwen Duan, Henghao Feng, Jin Yang, Wei Guo, Jincheng Kong^*, Jun Zhao

^*Corresponding author for this work

School of Physics

Kunming Institute of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The “facet effect” had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Te-doped 〈1 1 1〉 and 〈1 0 0〉 GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of 〈1 1 1〉 GaSb and the edge facets of 〈1 0 0〉 GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared transmittance differences, and epitaxial film defects caused by the “facet effect” were comprehensively analyzed. The influence of the shoulder angle on the edge facets of 〈1 0 0〉 GaSb and the size differences of edge facets between the Ga-face and Sb-face were studied.

Original language	English
Article number	127706
Journal	Journal of Crystal Growth
Volume	636
DOIs	https://doi.org/10.1016/j.jcrysgro.2024.127706
Publication status	Published - 15 Jun 2024

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10.1016/j.jcrysgro.2024.127706

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title = "Study on the facet effect in LEC-GaSb single crystals",

abstract = "The “facet effect” had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Te-doped 〈1 1 1〉 and 〈1 0 0〉 GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of 〈1 1 1〉 GaSb and the edge facets of 〈1 0 0〉 GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared transmittance differences, and epitaxial film defects caused by the “facet effect” were comprehensively analyzed. The influence of the shoulder angle on the edge facets of 〈1 0 0〉 GaSb and the size differences of edge facets between the Ga-face and Sb-face were studied.",

author = "Weimin Dong and Jun Jiang and Qianwen Peng and Chengao Liu and Deliang Chu and Biwen Duan and Henghao Feng and Jin Yang and Wei Guo and Jincheng Kong and Jun Zhao",

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doi = "10.1016/j.jcrysgro.2024.127706",

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T1 - Study on the facet effect in LEC-GaSb single crystals

AU - Dong, Weimin

AU - Jiang, Jun

AU - Peng, Qianwen

AU - Liu, Chengao

AU - Chu, Deliang

AU - Duan, Biwen

AU - Feng, Henghao

AU - Yang, Jin

AU - Guo, Wei

AU - Kong, Jincheng

AU - Zhao, Jun

PY - 2024/6/15

Y1 - 2024/6/15

N2 - The “facet effect” had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Te-doped 〈1 1 1〉 and 〈1 0 0〉 GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of 〈1 1 1〉 GaSb and the edge facets of 〈1 0 0〉 GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared transmittance differences, and epitaxial film defects caused by the “facet effect” were comprehensively analyzed. The influence of the shoulder angle on the edge facets of 〈1 0 0〉 GaSb and the size differences of edge facets between the Ga-face and Sb-face were studied.

AB - The “facet effect” had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Te-doped 〈1 1 1〉 and 〈1 0 0〉 GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of 〈1 1 1〉 GaSb and the edge facets of 〈1 0 0〉 GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared transmittance differences, and epitaxial film defects caused by the “facet effect” were comprehensively analyzed. The influence of the shoulder angle on the edge facets of 〈1 0 0〉 GaSb and the size differences of edge facets between the Ga-face and Sb-face were studied.

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DO - 10.1016/j.jcrysgro.2024.127706

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SN - 0022-0248

VL - 636

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

M1 - 127706

ER -

Study on the facet effect in LEC-GaSb single crystals

Abstract

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