Study on the ablation of layered semiconductor material by femtosecond laser

Kai Wang, Man Lou Ye, Bao Shan Guo, Jing Ya Sun*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Graphene has emerged excellent electronic, optical and mechanical properties as a layered semiconductor, and opening its bandgap through modulation further expands its practical applications. Direct laser writing has been widely used in material modulation, owing to its high precision, convenient local processing capacity. As an important factor, laser parameters play a crucial role in the ablation of materials. In this paper, the influence of laser parameters on the ablation was investigated by adjusting the energy and numbers of laser pulse. The saturation of ablation was found in the case of 500 pulses, and the ablation threshold of graphene paper was calculated to be 0.2 J/cm2. The results above have a positive effect on the modulation and the further devices fabrication of graphene paper.

Original languageEnglish
Title of host publicationInternational Conference on Laser, Optics and Optoelectronic Technology, LOPET 2021
EditorsChangsi Peng, Fengjie Cen
PublisherSPIE
ISBN (Electronic)9781510646162
DOIs
Publication statusPublished - 2021
Event2021 International Conference on Laser, Optics and Optoelectronic Technology, LOPET 2021 - Xi'an, China
Duration: 28 May 202130 May 2021

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11885
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference2021 International Conference on Laser, Optics and Optoelectronic Technology, LOPET 2021
Country/TerritoryChina
CityXi'an
Period28/05/2130/05/21

Keywords

  • Ablation
  • Femtosecond laser
  • Graphene

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