Study of the photovoltaic properties of tin oxide/porous silicon/silicon

Qihua Shen; Suntao Wu; Wenzhang Zhu; Yanhua Wang

Study of the photovoltaic properties of tin oxide/porous silicon/silicon

Qihua Shen^*, Suntao Wu, Wenzhang Zhu, Yanhua Wang

^*Corresponding author for this work

Xiamen University

Research output: Contribution to journal › Article › peer-review

Abstract

The photovoltage spectra of tin oxide/porous silicon/silicon (SnO₂/PS/Si) has been studied. It is shown that there exist two heterojunctions in SnO₂/PS/Si structure. The photovoltage decreases evidently when the sample absorbs reducing gas. The photovoltage decreases by 16.4-27.5 percent when the absorbed gas contains 1 percent liquified petroleum, by 8.1-19.4 percent when the sample absorbs gas with 1 percent CO, and by 12.1-14.9 percent when the sample absorbs gas with 1 percent H₂. The experimental results indicate that SnO₂/PS/Si is a good material for gas sensor. The mechanism for the gas absorption of SnO₂/PS/Si is discussed.

Original language	English
Pages (from-to)	43-48
Number of pages	6
Journal	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Volume	18
Issue number	1
Publication status	Published - 1998
Externally published	Yes

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title = "Study of the photovoltaic properties of tin oxide/porous silicon/silicon",

abstract = "The photovoltage spectra of tin oxide/porous silicon/silicon (SnO2/PS/Si) has been studied. It is shown that there exist two heterojunctions in SnO2/PS/Si structure. The photovoltage decreases evidently when the sample absorbs reducing gas. The photovoltage decreases by 16.4-27.5 percent when the absorbed gas contains 1 percent liquified petroleum, by 8.1-19.4 percent when the sample absorbs gas with 1 percent CO, and by 12.1-14.9 percent when the sample absorbs gas with 1 percent H2. The experimental results indicate that SnO2/PS/Si is a good material for gas sensor. The mechanism for the gas absorption of SnO2/PS/Si is discussed.",

author = "Qihua Shen and Suntao Wu and Wenzhang Zhu and Yanhua Wang",

year = "1998",

language = "English",

volume = "18",

pages = "43--48",

journal = "Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics",

issn = "1000-3819",

publisher = "Research Progress of Solid State Electronics",

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}

TY - JOUR

T1 - Study of the photovoltaic properties of tin oxide/porous silicon/silicon

AU - Shen, Qihua

AU - Wu, Suntao

AU - Zhu, Wenzhang

AU - Wang, Yanhua

PY - 1998

Y1 - 1998

N2 - The photovoltage spectra of tin oxide/porous silicon/silicon (SnO2/PS/Si) has been studied. It is shown that there exist two heterojunctions in SnO2/PS/Si structure. The photovoltage decreases evidently when the sample absorbs reducing gas. The photovoltage decreases by 16.4-27.5 percent when the absorbed gas contains 1 percent liquified petroleum, by 8.1-19.4 percent when the sample absorbs gas with 1 percent CO, and by 12.1-14.9 percent when the sample absorbs gas with 1 percent H2. The experimental results indicate that SnO2/PS/Si is a good material for gas sensor. The mechanism for the gas absorption of SnO2/PS/Si is discussed.

AB - The photovoltage spectra of tin oxide/porous silicon/silicon (SnO2/PS/Si) has been studied. It is shown that there exist two heterojunctions in SnO2/PS/Si structure. The photovoltage decreases evidently when the sample absorbs reducing gas. The photovoltage decreases by 16.4-27.5 percent when the absorbed gas contains 1 percent liquified petroleum, by 8.1-19.4 percent when the sample absorbs gas with 1 percent CO, and by 12.1-14.9 percent when the sample absorbs gas with 1 percent H2. The experimental results indicate that SnO2/PS/Si is a good material for gas sensor. The mechanism for the gas absorption of SnO2/PS/Si is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0032279317&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032279317

SN - 1000-3819

VL - 18

SP - 43

EP - 48

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 1

ER -

Study of the photovoltaic properties of tin oxide/porous silicon/silicon

Abstract

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