Structural relaxation of amorphous silicon carbide thin films in thermal annealing

Amorphous Si_0.4C_0.6 thin films were deposited by radio frequency magnetron sputtering onto non-heated single crystal Si substrates, followed by annealing at 800 °C or 1100 °C in the vacuum chamber. The chemical bond properties and atomic local ordering as a function of the annealing temperature were characterized by Auger electron spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, Infrared absorption spectroscopy, X-ray diffraction, and Raman spectroscopy measurements. We have examined the evolution of microstructure in annealing-induced relaxation process, and investigated the initial stages of thermal crystallization of amorphous Si_0.4C_0.6. Meanwhile, the structure of excess C in the films also has been studied.