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Strain-Induced One-Dimensional Magnetic Stripe in Metallic Monolayer H-NbSe2

  • Liangguang Jia
  • , Can Zhang
  • , Fei Gao
  • , Yaoyao Chen
  • , Lili Zhou
  • , Fudi Zhou
  • , Xu Han
  • , Teng Zhang
  • , Daniel Sánchez-Portal
  • , Shiwu Gao
  • , Yu Zhang*
  • , Yeliang Wang*
  • *Corresponding author for this work
  • Beijing Institute of Technology
  • Donostia International Physics Center
  • Centro Mixto CSIC-UPV/EHU
  • China Academy of Engineering Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Lattice distortion of materials has a profound impact on their electronic and magnetic properties, which can generate local magnetic states in intrinsically non-magnetic systems. Here we report on the realization of a one-dimensional (1D) magnetic stripe in monolayer H-NbSe2 sustained by strain along the terraces of the graphene/SiC substrates. The strength of this tensile strain is widely tunable by the height-to-width ratio of the terraces. Increasing the tensile strength leads to the shifts and splitting of the Nb 4d bands crossing the Fermi energy, generating spin polarization in a 1D magnetic stripe along the terrace. Simultaneously, the charge-density-wave signature of strained H-NbSe2 is significantly suppressed. Such a magnetic stripe can be locally quenched by an individual Se-atom defect via the defect-induced Jahn-Teller distortion and charge density redistribution. These findings provide a different route to achieving and manipulating 1D magnetism in otherwise non-magnetic systems, offering a new way for spintronic devices.

Original languageEnglish
Article number080712
JournalChinese Physics Letters
Volume42
Issue number8
DOIs
Publication statusPublished - 1 Jul 2025
Externally publishedYes

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