Strain-induced negative differential resistance in armchair-edge graphene nanoribbons

Hui Fang; Ru Zhi Wang; Si Ying Chen; Mi Yan; Xue Mei Song; Bo Wang

doi:10.1063/1.3556637

Strain-induced negative differential resistance in armchair-edge graphene nanoribbons

Hui Fang, Ru Zhi Wang^*, Si Ying Chen, Mi Yan, Xue Mei Song, Bo Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

The transport properties of graphene strips under tensile strain have been theoretically investigated. For the armchair-edge graphene nanoribbons (GNRs) with width N=3m-1, the additional negative differential resistance (NDR) undergoes a process from occurring to enhancement and then disappearance with increasing tensile strain. The changes in the additional NDR may be originated from the suppression of strain-mediated channel states for the variations in degenerate energy bands near Fermi level. The strain-induced NDR behaviors of the GNRs present the possibility of the potential applications in electromechanical nanodevices such as stress-controlled Goto pair for digital signal restoration.

Original language	English
Article number	082108
Journal	Applied Physics Letters
Volume	98
Issue number	8
DOIs	https://doi.org/10.1063/1.3556637
Publication status	Published - 21 Feb 2011
Externally published	Yes

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title = "Strain-induced negative differential resistance in armchair-edge graphene nanoribbons",

abstract = "The transport properties of graphene strips under tensile strain have been theoretically investigated. For the armchair-edge graphene nanoribbons (GNRs) with width N=3m-1, the additional negative differential resistance (NDR) undergoes a process from occurring to enhancement and then disappearance with increasing tensile strain. The changes in the additional NDR may be originated from the suppression of strain-mediated channel states for the variations in degenerate energy bands near Fermi level. The strain-induced NDR behaviors of the GNRs present the possibility of the potential applications in electromechanical nanodevices such as stress-controlled Goto pair for digital signal restoration.",

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AU - Fang, Hui

AU - Wang, Ru Zhi

AU - Chen, Si Ying

AU - Yan, Mi

AU - Song, Xue Mei

AU - Wang, Bo

PY - 2011/2/21

Y1 - 2011/2/21

N2 - The transport properties of graphene strips under tensile strain have been theoretically investigated. For the armchair-edge graphene nanoribbons (GNRs) with width N=3m-1, the additional negative differential resistance (NDR) undergoes a process from occurring to enhancement and then disappearance with increasing tensile strain. The changes in the additional NDR may be originated from the suppression of strain-mediated channel states for the variations in degenerate energy bands near Fermi level. The strain-induced NDR behaviors of the GNRs present the possibility of the potential applications in electromechanical nanodevices such as stress-controlled Goto pair for digital signal restoration.

AB - The transport properties of graphene strips under tensile strain have been theoretically investigated. For the armchair-edge graphene nanoribbons (GNRs) with width N=3m-1, the additional negative differential resistance (NDR) undergoes a process from occurring to enhancement and then disappearance with increasing tensile strain. The changes in the additional NDR may be originated from the suppression of strain-mediated channel states for the variations in degenerate energy bands near Fermi level. The strain-induced NDR behaviors of the GNRs present the possibility of the potential applications in electromechanical nanodevices such as stress-controlled Goto pair for digital signal restoration.

UR - https://www.scopus.com/pages/publications/79952099062

U2 - 10.1063/1.3556637

DO - 10.1063/1.3556637

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VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082108

ER -

Strain-induced negative differential resistance in armchair-edge graphene nanoribbons

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