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Spontaneous Formation of a Superconductor–Topological Insulator–Normal Metal Layered Heterostructure

  • Yu Qi Wang
  • , Xu Wu
  • , Ye Liang Wang*
  • , Yan Shao
  • , Tao Lei
  • , Jia Ou Wang
  • , Shi Yu Zhu
  • , Haiming Guo
  • , Ling Xiao Zhao
  • , Gen Fu Chen
  • , Simin Nie
  • , Hong Ming Weng
  • , Kurash Ibrahim
  • , Xi Dai
  • , Zhong Fang
  • , Hong Jun Gao
  • *Corresponding author for this work
  • CAS - Institute of Physics
  • CAS - Institute of High Energy Physics
  • Collaborative Innovation Center of Quantum Matter

Research output: Contribution to journal › Article › peer-review

Abstract

Researchers report fabricating a superconductor-topological insulator-normal metal heterostructure with a layered configuration of HfTe3/HfTe5/Hf for the first time. By optimizing the experimental process, they find that this heterostructure can indeed form spontaneously. The atomic structure of the heterostructure has been determined by in situ scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Scanning tunneling spectroscopy (STS) measurements directly reveal a bandgap as large as 60 meV in HfTe5 film and a superconducting spectrum in HfTe3/HfTe5.

Original languageEnglish
Pages (from-to)5013-5017
Number of pages5
JournalAdvanced Materials
Volume28
Issue number25
DOIs
Publication statusPublished - Jul 2016
Externally publishedYes

Keywords

  • HfTe
  • HfTe
  • epitaxial growth
  • layered heterostructures
  • superconductivity

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