Abstract
Researchers report fabricating a superconductor-topological insulator-normal metal heterostructure with a layered configuration of HfTe3/HfTe5/Hf for the first time. By optimizing the experimental process, they find that this heterostructure can indeed form spontaneously. The atomic structure of the heterostructure has been determined by in situ scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Scanning tunneling spectroscopy (STS) measurements directly reveal a bandgap as large as 60 meV in HfTe5 film and a superconducting spectrum in HfTe3/HfTe5.
| Original language | English |
|---|---|
| Pages (from-to) | 5013-5017 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 28 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - Jul 2016 |
| Externally published | Yes |
Keywords
- HfTe
- HfTe
- epitaxial growth
- layered heterostructures
- superconductivity