TY - JOUR
T1 - Spin-Stabilization by Coulomb Blockade in a Vanadium Dimer in WSe2
AU - Stolz, Samuel
AU - Hou, Bowen
AU - Wang, Dan
AU - Kozhakhmetov, Azimkhan
AU - Dong, Chengye
AU - Gröning, Oliver
AU - Robinson, Joshua A.
AU - Qiu, Diana Y.
AU - Schuler, Bruno
N1 - Publisher Copyright:
© 2023 American Chemical Society.
PY - 2023/12/12
Y1 - 2023/12/12
N2 - Charged dopants in 2D transition metal dichalcogenides (TMDs) have been associated with the formation of hydrogenic bound states, defect-bound trions, and gate-controlled magnetism. Charge-transfer at the TMD-substrate interface and the proximity to other charged defects can be used to regulate the occupation of the dopant’s energy levels. In this study, we examine vanadium-doped WSe2 monolayers on quasi-freestanding epitaxial graphene, by high-resolution scanning probe microscopy and ab initio calculations. Vanadium atoms substitute W atoms and adopt a negative charge state through charge donation from the graphene substrate. VW-1 dopants exhibit a series of occupied p-type defect states, accompanied by an intriguing electronic fine-structure that we attribute to hydrogenic states bound to the charged impurity. We systematically studied the hybridization in V dimers with different separations. For large dimer separations, the 2e- charge state prevails, and the magnetic moment is quenched. However, the Coulomb blockade in the nearest-neighbor dimer configuration stabilizes a 1e- charge state. The nearest-neighbor V-dimer exhibits an open-shell character for the frontier defect orbital, giving rise to a paramagnetic ground state. Our findings provide microscopic insights into the charge stabilization and many-body effects of single dopants and dopant pairs in a TMD host material.
AB - Charged dopants in 2D transition metal dichalcogenides (TMDs) have been associated with the formation of hydrogenic bound states, defect-bound trions, and gate-controlled magnetism. Charge-transfer at the TMD-substrate interface and the proximity to other charged defects can be used to regulate the occupation of the dopant’s energy levels. In this study, we examine vanadium-doped WSe2 monolayers on quasi-freestanding epitaxial graphene, by high-resolution scanning probe microscopy and ab initio calculations. Vanadium atoms substitute W atoms and adopt a negative charge state through charge donation from the graphene substrate. VW-1 dopants exhibit a series of occupied p-type defect states, accompanied by an intriguing electronic fine-structure that we attribute to hydrogenic states bound to the charged impurity. We systematically studied the hybridization in V dimers with different separations. For large dimer separations, the 2e- charge state prevails, and the magnetic moment is quenched. However, the Coulomb blockade in the nearest-neighbor dimer configuration stabilizes a 1e- charge state. The nearest-neighbor V-dimer exhibits an open-shell character for the frontier defect orbital, giving rise to a paramagnetic ground state. Our findings provide microscopic insights into the charge stabilization and many-body effects of single dopants and dopant pairs in a TMD host material.
KW - 2D materials
KW - Density functional theory
KW - Point defects
KW - Scanning probe microscopy
KW - Transition metal dichalcogenide
UR - https://www.scopus.com/pages/publications/85179158995
U2 - 10.1021/acsnano.3c04841
DO - 10.1021/acsnano.3c04841
M3 - Article
C2 - 37976219
AN - SCOPUS:85179158995
SN - 1936-0851
VL - 17
SP - 23422
EP - 23429
JO - ACS Nano
JF - ACS Nano
IS - 23
ER -