Specular Andreev reflection and magnetoresistance in graphene-based ferromagnet-superconductor double junctions

Chunxu Bai; Yanling Yang; Xiangdong Zhang

doi:10.1063/1.2894513

Specular Andreev reflection and magnetoresistance in graphene-based ferromagnet-superconductor double junctions

Chunxu Bai^*, Yanling Yang, Xiangdong Zhang

^*Corresponding author for this work

Beijing Normal University

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Spin-polarized transports of relativistic electrons through graphene-based ferromagnet-superconductor double junctions have been investigated theoretically. In the presence of specular Andreev reflection, some unusual properties are found. The oscillating negative magnetoresistance (MR) is not only observed, but the resonance peak of the MR also appears at a certain bias voltage due to the retroreflection crossing over to the specular Andreev reflection. This means that the MR can be tuned by external bias voltage, which benefits the spin-polarized electron device based on the graphene materials.

Original language	English
Article number	102513
Journal	Applied Physics Letters
Volume	92
Issue number	10
DOIs	https://doi.org/10.1063/1.2894513
Publication status	Published - 2008
Externally published	Yes

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abstract = "Spin-polarized transports of relativistic electrons through graphene-based ferromagnet-superconductor double junctions have been investigated theoretically. In the presence of specular Andreev reflection, some unusual properties are found. The oscillating negative magnetoresistance (MR) is not only observed, but the resonance peak of the MR also appears at a certain bias voltage due to the retroreflection crossing over to the specular Andreev reflection. This means that the MR can be tuned by external bias voltage, which benefits the spin-polarized electron device based on the graphene materials.",

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AB - Spin-polarized transports of relativistic electrons through graphene-based ferromagnet-superconductor double junctions have been investigated theoretically. In the presence of specular Andreev reflection, some unusual properties are found. The oscillating negative magnetoresistance (MR) is not only observed, but the resonance peak of the MR also appears at a certain bias voltage due to the retroreflection crossing over to the specular Andreev reflection. This means that the MR can be tuned by external bias voltage, which benefits the spin-polarized electron device based on the graphene materials.

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Specular Andreev reflection and magnetoresistance in graphene-based ferromagnet-superconductor double junctions

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