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Spatiotemporal dynamics of photogenerated carriers in GaAs/AlGaAs multiple quantum wells

  • Chang Cheng Hu
  • , Hui Qi Ye
  • , Gang Wang
  • , Bao Li Liu*
  • *Corresponding author for this work
  • Jilin University
  • CAS - Institute of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The ambipolar diffusion coefficient of (110) GaAs/AlGaAs multiple quantum wells was measured by the transient spin grating technique. The ambipolar diffusion coefficient and carrier life time, which are Da=13.0 cm2/s and τR=1.9 ns, were obtained directly by this technique under carrier concentration nex=3.4×1010/cm2 at room temperature. The measured Da keeps almost a constant value when the photoexcited carrier concentration is increased up to 1.2×1011/cm2.

Original languageEnglish
Article number017803
JournalWuli Xuebao/Acta Physica Sinica
Volume60
Issue number1
Publication statusPublished - Jan 2011
Externally publishedYes

Keywords

  • Hole transport
  • Quantum well
  • Transient grating

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