Abstract
The ambipolar diffusion coefficient of (110) GaAs/AlGaAs multiple quantum wells was measured by the transient spin grating technique. The ambipolar diffusion coefficient and carrier life time, which are Da=13.0 cm2/s and τR=1.9 ns, were obtained directly by this technique under carrier concentration nex=3.4×1010/cm2 at room temperature. The measured Da keeps almost a constant value when the photoexcited carrier concentration is increased up to 1.2×1011/cm2.
| Original language | English |
|---|---|
| Article number | 017803 |
| Journal | Wuli Xuebao/Acta Physica Sinica |
| Volume | 60 |
| Issue number | 1 |
| Publication status | Published - Jan 2011 |
| Externally published | Yes |
Keywords
- Hole transport
- Quantum well
- Transient grating
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