Solvo-thermal synthesis of AlN nano-needles: Their photoluminescence and field emission properties

Sajjad Hussain Shah; Ghulam Nabi; Waheed S. Khan; Abdul Majid; Chuanbao Cao; Safdar Ali; Mudassar Hussain; Azeem Nabi; Saadi Ishaq; Faheem K. Butt

doi:10.1016/j.matlet.2013.06.010

Solvo-thermal synthesis of AlN nano-needles: Their photoluminescence and field emission properties

Sajjad Hussain Shah^*
, Ghulam Nabi
, Waheed S. Khan
, Abdul Majid
, Chuanbao Cao
, Safdar Ali
, Mudassar Hussain
, Azeem Nabi
, Saadi Ishaq
, Faheem K. Butt

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

High density aluminum nitride nano-needles with sharp tips have been synthesized on Si substrate by pre-treating the precursors with aqueous NH ₃ via facile chemical vapor deposition method without any catalyst. The as synthesized nano-needles have been characterized by XRD, FESEM, EDX, HRTEM and SAED. The observed diameter of the nano-needles is 40-100 nm having sharp tips. The AlN nano-needles exhibited amazing turn-on field of 5.65 V μm^-1 (0.01 mA cm^-2) at room temperature which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The room-temperature PL emission peak at 486 nm (2.55 eV) indicates that AlN nano-needles also have potential application in light-emitting nano-device.

Original language	English
Pages (from-to)	255-258
Number of pages	4
Journal	Materials Letters
Volume	107
DOIs	https://doi.org/10.1016/j.matlet.2013.06.010
Publication status	Published - 2013

Keywords

Chemical vapor deposition
Defects
Field emission properties
Nano-needle
Semiconductors

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10.1016/j.matlet.2013.06.010

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@article{27892f427d904aab9efc3e37389add96,

title = "Solvo-thermal synthesis of AlN nano-needles: Their photoluminescence and field emission properties",

abstract = "High density aluminum nitride nano-needles with sharp tips have been synthesized on Si substrate by pre-treating the precursors with aqueous NH 3 via facile chemical vapor deposition method without any catalyst. The as synthesized nano-needles have been characterized by XRD, FESEM, EDX, HRTEM and SAED. The observed diameter of the nano-needles is 40-100 nm having sharp tips. The AlN nano-needles exhibited amazing turn-on field of 5.65 V μm-1 (0.01 mA cm-2) at room temperature which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The room-temperature PL emission peak at 486 nm (2.55 eV) indicates that AlN nano-needles also have potential application in light-emitting nano-device.",

keywords = "Chemical vapor deposition, Defects, Field emission properties, Nano-needle, Semiconductors",

author = "\{Hussain Shah\}, Sajjad and Ghulam Nabi and Khan, \{Waheed S.\} and Abdul Majid and Chuanbao Cao and Safdar Ali and Mudassar Hussain and Azeem Nabi and Saadi Ishaq and Butt, \{Faheem K.\}",

year = "2013",

doi = "10.1016/j.matlet.2013.06.010",

language = "English",

volume = "107",

pages = "255--258",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Solvo-thermal synthesis of AlN nano-needles

T2 - Their photoluminescence and field emission properties

AU - Hussain Shah, Sajjad

AU - Nabi, Ghulam

AU - Khan, Waheed S.

AU - Majid, Abdul

AU - Cao, Chuanbao

AU - Ali, Safdar

AU - Hussain, Mudassar

AU - Nabi, Azeem

AU - Ishaq, Saadi

AU - Butt, Faheem K.

PY - 2013

Y1 - 2013

N2 - High density aluminum nitride nano-needles with sharp tips have been synthesized on Si substrate by pre-treating the precursors with aqueous NH 3 via facile chemical vapor deposition method without any catalyst. The as synthesized nano-needles have been characterized by XRD, FESEM, EDX, HRTEM and SAED. The observed diameter of the nano-needles is 40-100 nm having sharp tips. The AlN nano-needles exhibited amazing turn-on field of 5.65 V μm-1 (0.01 mA cm-2) at room temperature which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The room-temperature PL emission peak at 486 nm (2.55 eV) indicates that AlN nano-needles also have potential application in light-emitting nano-device.

AB - High density aluminum nitride nano-needles with sharp tips have been synthesized on Si substrate by pre-treating the precursors with aqueous NH 3 via facile chemical vapor deposition method without any catalyst. The as synthesized nano-needles have been characterized by XRD, FESEM, EDX, HRTEM and SAED. The observed diameter of the nano-needles is 40-100 nm having sharp tips. The AlN nano-needles exhibited amazing turn-on field of 5.65 V μm-1 (0.01 mA cm-2) at room temperature which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The room-temperature PL emission peak at 486 nm (2.55 eV) indicates that AlN nano-needles also have potential application in light-emitting nano-device.

KW - Chemical vapor deposition

KW - Defects

KW - Field emission properties

KW - Nano-needle

KW - Semiconductors

UR - https://www.scopus.com/pages/publications/84879801074

U2 - 10.1016/j.matlet.2013.06.010

DO - 10.1016/j.matlet.2013.06.010

M3 - Article

AN - SCOPUS:84879801074

SN - 0167-577X

VL - 107

SP - 255

EP - 258

JO - Materials Letters

JF - Materials Letters

ER -

Solvo-thermal synthesis of AlN nano-needles: Their photoluminescence and field emission properties

Abstract

Keywords

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