Solvo-thermal synthesis of AlN nano-needles: Their photoluminescence and field emission properties

Sajjad Hussain Shah*, Ghulam Nabi, Waheed S. Khan, Abdul Majid, Chuanbao Cao, Safdar Ali, Mudassar Hussain, Azeem Nabi, Saadi Ishaq, Faheem K. Butt

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

High density aluminum nitride nano-needles with sharp tips have been synthesized on Si substrate by pre-treating the precursors with aqueous NH 3 via facile chemical vapor deposition method without any catalyst. The as synthesized nano-needles have been characterized by XRD, FESEM, EDX, HRTEM and SAED. The observed diameter of the nano-needles is 40-100 nm having sharp tips. The AlN nano-needles exhibited amazing turn-on field of 5.65 V μm-1 (0.01 mA cm-2) at room temperature which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The room-temperature PL emission peak at 486 nm (2.55 eV) indicates that AlN nano-needles also have potential application in light-emitting nano-device.

Original languageEnglish
Pages (from-to)255-258
Number of pages4
JournalMaterials Letters
Volume107
DOIs
Publication statusPublished - 2013

Keywords

  • Chemical vapor deposition
  • Defects
  • Field emission properties
  • Nano-needle
  • Semiconductors

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