Abstract
High density aluminum nitride nano-needles with sharp tips have been synthesized on Si substrate by pre-treating the precursors with aqueous NH 3 via facile chemical vapor deposition method without any catalyst. The as synthesized nano-needles have been characterized by XRD, FESEM, EDX, HRTEM and SAED. The observed diameter of the nano-needles is 40-100 nm having sharp tips. The AlN nano-needles exhibited amazing turn-on field of 5.65 V μm-1 (0.01 mA cm-2) at room temperature which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The room-temperature PL emission peak at 486 nm (2.55 eV) indicates that AlN nano-needles also have potential application in light-emitting nano-device.
Original language | English |
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Pages (from-to) | 255-258 |
Number of pages | 4 |
Journal | Materials Letters |
Volume | 107 |
DOIs | |
Publication status | Published - 2013 |
Keywords
- Chemical vapor deposition
- Defects
- Field emission properties
- Nano-needle
- Semiconductors