SnSe                         2                          Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity

Hong Xu; Jie Xing; Yuan Huang; Chen Ge; Jinghao Lu; Xu Han; Jianyu Du; Huiying Hao; Jingjing Dong; Hao Liu

doi:10.1186/s11671-019-2850-0

SnSe ₂ Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity

Hong Xu, Jie Xing^*, Yuan Huang, Chen Ge, Jinghao Lu, Xu Han, Jianyu Du, Huiying Hao, Jingjing Dong, Hao Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

SnSe ₂ field-effect transistor was fabricated based on exfoliated few-layered SnSe ₂ flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe ₂ FET can achieve an on/off ratio as high as ~ 10 ⁴ within 1 V bias, which is ever extremely difficult for SnSe ₂ due to its ultrahigh carrier density (10 ¹⁸ /cm ³ ). Moreover, the subthreshold swing and mobility are both improved to ∼ 62 mV/decade and ~ 127 cm ² V ⁻¹ s ⁻¹ at 300 K, which results from the efficient screening by the liquid dielectric gate. Interestingly, the SnSe ₂ FET exhibits a gate bias-dependent photoconductivity, in which a competition between the carrier concentration and the mobility under illumination plays a key role in determining the polarity of photoconductivity.

Original language	English
Article number	17
Journal	Nanoscale Research Letters
Volume	14
DOIs	https://doi.org/10.1186/s11671-019-2850-0
Publication status	Published - 2019
Externally published	Yes

Keywords

Field-effect transistor
On/off ratio
Photoconductivity
SnSe

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10.1186/s11671-019-2850-0

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Xu, H., Xing, J., Huang, Y., Ge, C., Lu, J., Han, X., Du, J., Hao, H., Dong, J., & Liu, H. (2019). SnSe ₂ Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity Nanoscale Research Letters, 14, Article 17. https://doi.org/10.1186/s11671-019-2850-0

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title = " SnSe 2 Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity ",

abstract = " SnSe 2 field-effect transistor was fabricated based on exfoliated few-layered SnSe 2 flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe 2 FET can achieve an on/off ratio as high as ~ 10 4 within 1 V bias, which is ever extremely difficult for SnSe 2 due to its ultrahigh carrier density (10 18 /cm 3 ). Moreover, the subthreshold swing and mobility are both improved to ∼ 62 mV/decade and ~ 127 cm 2 V −1 s −1 at 300 K, which results from the efficient screening by the liquid dielectric gate. Interestingly, the SnSe 2 FET exhibits a gate bias-dependent photoconductivity, in which a competition between the carrier concentration and the mobility under illumination plays a key role in determining the polarity of photoconductivity.",

keywords = "Field-effect transistor, On/off ratio, Photoconductivity, SnSe",

author = "Hong Xu and Jie Xing and Yuan Huang and Chen Ge and Jinghao Lu and Xu Han and Jianyu Du and Huiying Hao and Jingjing Dong and Hao Liu",

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year = "2019",

doi = "10.1186/s11671-019-2850-0",

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volume = "14",

journal = "Nanoscale Research Letters",

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T1 - SnSe 2 Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity

AU - Xu, Hong

AU - Xing, Jie

AU - Huang, Yuan

AU - Ge, Chen

AU - Lu, Jinghao

AU - Han, Xu

AU - Du, Jianyu

AU - Hao, Huiying

AU - Dong, Jingjing

AU - Liu, Hao

PY - 2019

Y1 - 2019

N2 - SnSe 2 field-effect transistor was fabricated based on exfoliated few-layered SnSe 2 flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe 2 FET can achieve an on/off ratio as high as ~ 10 4 within 1 V bias, which is ever extremely difficult for SnSe 2 due to its ultrahigh carrier density (10 18 /cm 3 ). Moreover, the subthreshold swing and mobility are both improved to ∼ 62 mV/decade and ~ 127 cm 2 V −1 s −1 at 300 K, which results from the efficient screening by the liquid dielectric gate. Interestingly, the SnSe 2 FET exhibits a gate bias-dependent photoconductivity, in which a competition between the carrier concentration and the mobility under illumination plays a key role in determining the polarity of photoconductivity.

AB - SnSe 2 field-effect transistor was fabricated based on exfoliated few-layered SnSe 2 flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe 2 FET can achieve an on/off ratio as high as ~ 10 4 within 1 V bias, which is ever extremely difficult for SnSe 2 due to its ultrahigh carrier density (10 18 /cm 3 ). Moreover, the subthreshold swing and mobility are both improved to ∼ 62 mV/decade and ~ 127 cm 2 V −1 s −1 at 300 K, which results from the efficient screening by the liquid dielectric gate. Interestingly, the SnSe 2 FET exhibits a gate bias-dependent photoconductivity, in which a competition between the carrier concentration and the mobility under illumination plays a key role in determining the polarity of photoconductivity.

KW - Field-effect transistor

KW - On/off ratio

KW - Photoconductivity

KW - SnSe

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SN - 1931-7573

VL - 14

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

M1 - 17

ER -

SnSe ₂ Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity

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Keywords

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