Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs

Jun Liu; Wei Hua Yu; Song Yuan Yang; Yan Fei Hou; Da Sheng Cui; Xin Lyu

doi:10.11972/j.issn.1001-9014.2018.06.008

Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs

Jun Liu, Wei Hua Yu^*, Song Yuan Yang, Yan Fei Hou, Da Sheng Cui, Xin Lyu

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This paper presents an improved small-signal model and a W-band monolithic low noise amplifier (LNA) using 100 nm InAlAs/InGaAs/InP-based high electron mobility transistors (HEMT) technology. For improving the fitting accuracy of S-parameters in low frequency, the small-signal model takes into account differential resistances of gate-to-source and gate-to-drain diodes, which modeled by resistances R _fs and R _fd . A W-band LNA monolithic millimeter-wave integrated circuit (MMIC) has been designed and fabricated based on this model to verify the feasibility of this model. The amplifier is measured on-wafer with a small-signal peak gain of 14.4 dB at 92.5 GHz and 3-dB bandwidth from 85 to 110 GHz. In addition, the MMIC also exhibits an excellent noise characteristic with the noise figure of 4.1 dB and the associate gain of 13.8 dB at 88 GHz. This MMIC amplifier shows wider 3-dB bandwidth and higher per-stage gain than others results at the similar band.

Translated title of the contribution	InAlAs/InGaAs/InP基PHEMTs小信号建模及低噪声应用
Original language	English
Pages (from-to)	683-687
Number of pages	5
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	37
Issue number	6
DOIs	https://doi.org/10.11972/j.issn.1001-9014.2018.06.008
Publication status	Published - 1 Dec 2018

Keywords

InAlAs/InGaAs/InP
Low noise amplifier (LNA)
Millimeter and submillimeter
Monolithic millimeter-wave integrated circuit (MMIC)
Pseudomorplic high electronic mobility transistor (PHEMTs)
Small-signal model

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10.11972/j.issn.1001-9014.2018.06.008

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@article{2d695cb844e649f2aca498c370a02f7f,

title = "Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs",

abstract = " This paper presents an improved small-signal model and a W-band monolithic low noise amplifier (LNA) using 100 nm InAlAs/InGaAs/InP-based high electron mobility transistors (HEMT) technology. For improving the fitting accuracy of S-parameters in low frequency, the small-signal model takes into account differential resistances of gate-to-source and gate-to-drain diodes, which modeled by resistances R fs and R fd . A W-band LNA monolithic millimeter-wave integrated circuit (MMIC) has been designed and fabricated based on this model to verify the feasibility of this model. The amplifier is measured on-wafer with a small-signal peak gain of 14.4 dB at 92.5 GHz and 3-dB bandwidth from 85 to 110 GHz. In addition, the MMIC also exhibits an excellent noise characteristic with the noise figure of 4.1 dB and the associate gain of 13.8 dB at 88 GHz. This MMIC amplifier shows wider 3-dB bandwidth and higher per-stage gain than others results at the similar band.",

keywords = "InAlAs/InGaAs/InP, Low noise amplifier (LNA), Millimeter and submillimeter, Monolithic millimeter-wave integrated circuit (MMIC), Pseudomorplic high electronic mobility transistor (PHEMTs), Small-signal model",

author = "Jun Liu and Yu, {Wei Hua} and Yang, {Song Yuan} and Hou, {Yan Fei} and Cui, {Da Sheng} and Xin Lyu",

year = "2018",

month = dec,

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doi = "10.11972/j.issn.1001-9014.2018.06.008",

language = "English",

volume = "37",

pages = "683--687",

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T1 - Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs

AU - Liu, Jun

AU - Yu, Wei Hua

AU - Yang, Song Yuan

AU - Hou, Yan Fei

AU - Cui, Da Sheng

AU - Lyu, Xin

PY - 2018/12/1

Y1 - 2018/12/1

N2 - This paper presents an improved small-signal model and a W-band monolithic low noise amplifier (LNA) using 100 nm InAlAs/InGaAs/InP-based high electron mobility transistors (HEMT) technology. For improving the fitting accuracy of S-parameters in low frequency, the small-signal model takes into account differential resistances of gate-to-source and gate-to-drain diodes, which modeled by resistances R fs and R fd . A W-band LNA monolithic millimeter-wave integrated circuit (MMIC) has been designed and fabricated based on this model to verify the feasibility of this model. The amplifier is measured on-wafer with a small-signal peak gain of 14.4 dB at 92.5 GHz and 3-dB bandwidth from 85 to 110 GHz. In addition, the MMIC also exhibits an excellent noise characteristic with the noise figure of 4.1 dB and the associate gain of 13.8 dB at 88 GHz. This MMIC amplifier shows wider 3-dB bandwidth and higher per-stage gain than others results at the similar band.

AB - This paper presents an improved small-signal model and a W-band monolithic low noise amplifier (LNA) using 100 nm InAlAs/InGaAs/InP-based high electron mobility transistors (HEMT) technology. For improving the fitting accuracy of S-parameters in low frequency, the small-signal model takes into account differential resistances of gate-to-source and gate-to-drain diodes, which modeled by resistances R fs and R fd . A W-band LNA monolithic millimeter-wave integrated circuit (MMIC) has been designed and fabricated based on this model to verify the feasibility of this model. The amplifier is measured on-wafer with a small-signal peak gain of 14.4 dB at 92.5 GHz and 3-dB bandwidth from 85 to 110 GHz. In addition, the MMIC also exhibits an excellent noise characteristic with the noise figure of 4.1 dB and the associate gain of 13.8 dB at 88 GHz. This MMIC amplifier shows wider 3-dB bandwidth and higher per-stage gain than others results at the similar band.

KW - InAlAs/InGaAs/InP

KW - Low noise amplifier (LNA)

KW - Millimeter and submillimeter

KW - Monolithic millimeter-wave integrated circuit (MMIC)

KW - Pseudomorplic high electronic mobility transistor (PHEMTs)

KW - Small-signal model

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SN - 1001-9014

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JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

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ER -

Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs

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