Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response

Tao Luo; Bo Liang; Zhe Liu; Xuming Xie; Zheng Lou; Guozhen Shen

doi:10.1007/s11434-014-0687-6

Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response

Tao Luo, Bo Liang, Zhe Liu, Xuming Xie, Zheng Lou, Guozhen Shen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

Single-gallium antimonide (GaSb)-nanowire-based photodetectors were fabricated on both rigid SiO₂/Si substrate and flexible polyethylene terephthalate (PET) substrates, both of which exhibited high responsivity, fast-response, and long-term stability in photoswitching over a broad spectral range from ultraviolet to near infrared. Besides, the as-fabricated rigid device exhibited high responsivity of 7,350 A/W under illumination of λ = 350 nm and light intensity P = 0.2 mW/cm², while the flexible device displays higher detectivity of 9.67 × 10⁹ jones at 700 nm than the rigid one and lower noise equivalent power (NEP, NEP_700nm = 2.0 × 10⁻¹² W/Hz^1/2) for the much lower dark current on PET. The high responsivity, broad spectral detection from ultraviolet to near-infrared and long-term stability make GaSb nanowire one of the most important candidates to construct advanced optical sensors or other optoelectronic devices.

Original language	English
Pages (from-to)	101-108
Number of pages	8
Journal	Science Bulletin
Volume	60
Issue number	1
DOIs	https://doi.org/10.1007/s11434-014-0687-6
Publication status	Published - 9 Jan 2015
Externally published	Yes

Keywords

Broad spectral
Flexible photodetectors
GaSb
Nanowires

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10.1007/s11434-014-0687-6

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title = "Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response",

abstract = "Single-gallium antimonide (GaSb)-nanowire-based photodetectors were fabricated on both rigid SiO2/Si substrate and flexible polyethylene terephthalate (PET) substrates, both of which exhibited high responsivity, fast-response, and long-term stability in photoswitching over a broad spectral range from ultraviolet to near infrared. Besides, the as-fabricated rigid device exhibited high responsivity of 7,350 A/W under illumination of λ = 350 nm and light intensity P = 0.2 mW/cm2, while the flexible device displays higher detectivity of 9.67 × 109 jones at 700 nm than the rigid one and lower noise equivalent power (NEP, NEP700nm = 2.0 × 10−12 W/Hz1/2) for the much lower dark current on PET. The high responsivity, broad spectral detection from ultraviolet to near-infrared and long-term stability make GaSb nanowire one of the most important candidates to construct advanced optical sensors or other optoelectronic devices.",

keywords = "Broad spectral, Flexible photodetectors, GaSb, Nanowires",

author = "Tao Luo and Bo Liang and Zhe Liu and Xuming Xie and Zheng Lou and Guozhen Shen",

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T1 - Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response

AU - Luo, Tao

AU - Liang, Bo

AU - Liu, Zhe

AU - Xie, Xuming

AU - Lou, Zheng

AU - Shen, Guozhen

PY - 2015/1/9

Y1 - 2015/1/9

N2 - Single-gallium antimonide (GaSb)-nanowire-based photodetectors were fabricated on both rigid SiO2/Si substrate and flexible polyethylene terephthalate (PET) substrates, both of which exhibited high responsivity, fast-response, and long-term stability in photoswitching over a broad spectral range from ultraviolet to near infrared. Besides, the as-fabricated rigid device exhibited high responsivity of 7,350 A/W under illumination of λ = 350 nm and light intensity P = 0.2 mW/cm2, while the flexible device displays higher detectivity of 9.67 × 109 jones at 700 nm than the rigid one and lower noise equivalent power (NEP, NEP700nm = 2.0 × 10−12 W/Hz1/2) for the much lower dark current on PET. The high responsivity, broad spectral detection from ultraviolet to near-infrared and long-term stability make GaSb nanowire one of the most important candidates to construct advanced optical sensors or other optoelectronic devices.

AB - Single-gallium antimonide (GaSb)-nanowire-based photodetectors were fabricated on both rigid SiO2/Si substrate and flexible polyethylene terephthalate (PET) substrates, both of which exhibited high responsivity, fast-response, and long-term stability in photoswitching over a broad spectral range from ultraviolet to near infrared. Besides, the as-fabricated rigid device exhibited high responsivity of 7,350 A/W under illumination of λ = 350 nm and light intensity P = 0.2 mW/cm2, while the flexible device displays higher detectivity of 9.67 × 109 jones at 700 nm than the rigid one and lower noise equivalent power (NEP, NEP700nm = 2.0 × 10−12 W/Hz1/2) for the much lower dark current on PET. The high responsivity, broad spectral detection from ultraviolet to near-infrared and long-term stability make GaSb nanowire one of the most important candidates to construct advanced optical sensors or other optoelectronic devices.

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JF - Science Bulletin

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Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response

Abstract

Keywords

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