Single-crystalline In2S3 nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse

Xuming Xie; Guozhen Shen

doi:10.1039/c5nr00410a

Single-crystalline In₂S₃ nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse

Xuming Xie
, Guozhen Shen^*

^*Corresponding author for this work

Huazhong University of Science and Technology
CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

86 Citations (Scopus)

Abstract

With a band gap of 2.28 eV, In₂S₃ is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In₂S₃ nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In₂S₃ nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high I_on/I_off ratio up to 10⁶ and a high sensitivity to visible incident light with responsivity and quantum efficiency as high as 7.35 × 10⁴ A W^-1 and 2.28 × 10⁷%, respectively. Besides, the flexible photodetectors were demonstrated to possess a robust flexibility and excellent stability. With these favorable merits, In₂S₃ nanowires are believed to have a promising future in the application of high performance and flexible integrated optoelectronic devices.

Original language	English
Pages (from-to)	5046-5052
Number of pages	7
Journal	Nanoscale
Volume	7
Issue number	11
DOIs	https://doi.org/10.1039/c5nr00410a
Publication status	Published - 21 Mar 2015
Externally published	Yes

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@article{ca6781cb86324546bf6e60008404cb7a,

title = "Single-crystalline In2S3 nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse",

abstract = "With a band gap of 2.28 eV, In2S3 is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In2S3 nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In2S3 nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high Ion/Ioff ratio up to 106 and a high sensitivity to visible incident light with responsivity and quantum efficiency as high as 7.35 × 104 A W-1 and 2.28 × 107\%, respectively. Besides, the flexible photodetectors were demonstrated to possess a robust flexibility and excellent stability. With these favorable merits, In2S3 nanowires are believed to have a promising future in the application of high performance and flexible integrated optoelectronic devices.",

author = "Xuming Xie and Guozhen Shen",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2015.",

year = "2015",

month = mar,

day = "21",

doi = "10.1039/c5nr00410a",

language = "English",

volume = "7",

pages = "5046--5052",

journal = "Nanoscale",

issn = "2040-3364",

publisher = "Royal Society of Chemistry",

number = "11",

}

TY - JOUR

T1 - Single-crystalline In2S3 nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse

AU - Xie, Xuming

AU - Shen, Guozhen

N1 - Publisher Copyright: © The Royal Society of Chemistry 2015.

PY - 2015/3/21

Y1 - 2015/3/21

N2 - With a band gap of 2.28 eV, In2S3 is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In2S3 nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In2S3 nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high Ion/Ioff ratio up to 106 and a high sensitivity to visible incident light with responsivity and quantum efficiency as high as 7.35 × 104 A W-1 and 2.28 × 107%, respectively. Besides, the flexible photodetectors were demonstrated to possess a robust flexibility and excellent stability. With these favorable merits, In2S3 nanowires are believed to have a promising future in the application of high performance and flexible integrated optoelectronic devices.

AB - With a band gap of 2.28 eV, In2S3 is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In2S3 nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In2S3 nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high Ion/Ioff ratio up to 106 and a high sensitivity to visible incident light with responsivity and quantum efficiency as high as 7.35 × 104 A W-1 and 2.28 × 107%, respectively. Besides, the flexible photodetectors were demonstrated to possess a robust flexibility and excellent stability. With these favorable merits, In2S3 nanowires are believed to have a promising future in the application of high performance and flexible integrated optoelectronic devices.

UR - https://www.scopus.com/pages/publications/84924303482

U2 - 10.1039/c5nr00410a

DO - 10.1039/c5nr00410a

M3 - Article

AN - SCOPUS:84924303482

SN - 2040-3364

VL - 7

SP - 5046

EP - 5052

JO - Nanoscale

JF - Nanoscale

IS - 11

ER -

Single-crystalline In₂S₃ nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse

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