Single β -Ga2O3nanowire based lateral FinFET on Si

Siyuan Xu; Lining Liu; Guangming Qu; Xingfei Zhang; Chunyang Jia; Songhao Wu; Yuanxiao Ma; Young Jin Lee; Guodong Wang; Ji Hyeon Park; Yiyun Zhang; Xiaoyan Yi; Yeliang Wang; Jinmin Li

doi:10.1063/5.0086909

Single β -Ga₂O₃nanowire based lateral FinFET on Si

Siyuan Xu, Lining Liu, Guangming Qu, Xingfei Zhang, Chunyang Jia, Songhao Wu, Yuanxiao Ma, Young Jin Lee, Guodong Wang, Ji Hyeon Park^*, Yiyun Zhang^*, Xiaoyan Yi, Yeliang Wang, Jinmin Li

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit low leakage current (∼4 fA), and a relatively low subthreshold swing (∼110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/f noise and 1/f2 noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/f noise mechanism in the β-Ga2O3 FinFET in this work.

Original language	English
Article number	153501
Journal	Applied Physics Letters
Volume	120
Issue number	15
DOIs	https://doi.org/10.1063/5.0086909
Publication status	Published - 11 Apr 2022

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@article{8193cd58a32b45ec9b3504879b3caa82,

title = "Single β -Ga2O3nanowire based lateral FinFET on Si",

abstract = "A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit low leakage current (∼4 fA), and a relatively low subthreshold swing (∼110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/f noise and 1/f2 noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/f noise mechanism in the β-Ga2O3 FinFET in this work.",

author = "Siyuan Xu and Lining Liu and Guangming Qu and Xingfei Zhang and Chunyang Jia and Songhao Wu and Yuanxiao Ma and Lee, {Young Jin} and Guodong Wang and Park, {Ji Hyeon} and Yiyun Zhang and Xiaoyan Yi and Yeliang Wang and Jinmin Li",

note = "Publisher Copyright: {\textcopyright} 2022 Author(s).",

year = "2022",

month = apr,

day = "11",

doi = "10.1063/5.0086909",

language = "English",

volume = "120",

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TY - JOUR

T1 - Single β -Ga2O3nanowire based lateral FinFET on Si

AU - Xu, Siyuan

AU - Liu, Lining

AU - Qu, Guangming

AU - Zhang, Xingfei

AU - Jia, Chunyang

AU - Wu, Songhao

AU - Ma, Yuanxiao

AU - Lee, Young Jin

AU - Wang, Guodong

AU - Park, Ji Hyeon

AU - Zhang, Yiyun

AU - Yi, Xiaoyan

AU - Wang, Yeliang

AU - Li, Jinmin

PY - 2022/4/11

Y1 - 2022/4/11

N2 - A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit low leakage current (∼4 fA), and a relatively low subthreshold swing (∼110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/f noise and 1/f2 noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/f noise mechanism in the β-Ga2O3 FinFET in this work.

AB - A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit low leakage current (∼4 fA), and a relatively low subthreshold swing (∼110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/f noise and 1/f2 noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/f noise mechanism in the β-Ga2O3 FinFET in this work.

UR - http://www.scopus.com/inward/record.url?scp=85128952229&partnerID=8YFLogxK

U2 - 10.1063/5.0086909

DO - 10.1063/5.0086909

M3 - Article

AN - SCOPUS:85128952229

SN - 0003-6951

VL - 120

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153501

ER -

Single β -Ga₂O₃nanowire based lateral FinFET on Si

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