Simulation study of IGZO (with CuOx)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory

Zhijian Guo; Guanhua Yang; Fei Mo; Yeliang Wang

doi:10.1109/EDTM65772.2026.11497553

Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory

Zhijian Guo
, Guanhua Yang
, Fei Mo^*
, Yeliang Wang^*

^*Corresponding author for this work

Beijing Institute of Technology
CAS - Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, we proposed and studied a novel complementary ferroelectric field-effect transistor (CFeFET) using n-type IGZO channel with CuOx insertion layer and p-type silicon channel by TCAD simulations. The TCAD simulation of ultra-compact multi-bit Content Addressable Memory (CAM) design based on an IGZO/Si CFeFET is studied for the first time. The proposed design overcomes the mismatch in memory window (MW) between IGZO-FeFET and Si-FeFET caused by the lack of hole carriers in IGZO-FeFET during erase operation. The 1-bit and multi-bit CAM cell operation are successfully achieved through multi-level cell (MLC) operation of CFeFET with single IGZO-FeFET and Si-FeFET, showing great potential for advanced and high-density non-volatile memory applications.

Original language	English
Title of host publication	10th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798331585983
DOIs	https://doi.org/10.1109/EDTM65772.2026.11497553
Publication status	Published - 2026
Externally published	Yes
Event	10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026 - Penang, Malaysia Duration: 1 Mar 2026 → 4 Mar 2026

Publication series

Name	10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026

Conference

Conference	10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026
Country/Territory	Malaysia
City	Penang
Period	1/03/26 → 4/03/26

Keywords

Complementary Ferroelectric FET (CFeFET)
Content Addressable Memory (CAM)
IGZO-FeFET
Multi-Level Cell (MLC)

Access to Document

10.1109/EDTM65772.2026.11497553

Cite this

Guo, Z., Yang, G., Mo, F., & Wang, Y. (2026). Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory. In 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026 (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM65772.2026.11497553

Guo, Zhijian ; Yang, Guanhua ; Mo, Fei et al. / Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory. 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. Institute of Electrical and Electronics Engineers Inc., 2026. (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026).

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title = "Simulation study of IGZO (with CuOx)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory",

abstract = "In this work, we proposed and studied a novel complementary ferroelectric field-effect transistor (CFeFET) using n-type IGZO channel with CuOx insertion layer and p-type silicon channel by TCAD simulations. The TCAD simulation of ultra-compact multi-bit Content Addressable Memory (CAM) design based on an IGZO/Si CFeFET is studied for the first time. The proposed design overcomes the mismatch in memory window (MW) between IGZO-FeFET and Si-FeFET caused by the lack of hole carriers in IGZO-FeFET during erase operation. The 1-bit and multi-bit CAM cell operation are successfully achieved through multi-level cell (MLC) operation of CFeFET with single IGZO-FeFET and Si-FeFET, showing great potential for advanced and high-density non-volatile memory applications.",

keywords = "Complementary Ferroelectric FET (CFeFET), Content Addressable Memory (CAM), IGZO-FeFET, Multi-Level Cell (MLC)",

author = "Zhijian Guo and Guanhua Yang and Fei Mo and Yeliang Wang",

note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026 ; Conference date: 01-03-2026 Through 04-03-2026",

year = "2026",

doi = "10.1109/EDTM65772.2026.11497553",

language = "English",

series = "10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026",

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Guo, Z, Yang, G, Mo, F & Wang, Y 2026, Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory. in 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026, Institute of Electrical and Electronics Engineers Inc., 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026, Penang, Malaysia, 1/03/26. https://doi.org/10.1109/EDTM65772.2026.11497553

Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory. / Guo, Zhijian; Yang, Guanhua; Mo, Fei et al.
10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. Institute of Electrical and Electronics Engineers Inc., 2026. (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Guo, Zhijian

AU - Yang, Guanhua

AU - Mo, Fei

AU - Wang, Yeliang

PY - 2026

Y1 - 2026

N2 - In this work, we proposed and studied a novel complementary ferroelectric field-effect transistor (CFeFET) using n-type IGZO channel with CuOx insertion layer and p-type silicon channel by TCAD simulations. The TCAD simulation of ultra-compact multi-bit Content Addressable Memory (CAM) design based on an IGZO/Si CFeFET is studied for the first time. The proposed design overcomes the mismatch in memory window (MW) between IGZO-FeFET and Si-FeFET caused by the lack of hole carriers in IGZO-FeFET during erase operation. The 1-bit and multi-bit CAM cell operation are successfully achieved through multi-level cell (MLC) operation of CFeFET with single IGZO-FeFET and Si-FeFET, showing great potential for advanced and high-density non-volatile memory applications.

AB - In this work, we proposed and studied a novel complementary ferroelectric field-effect transistor (CFeFET) using n-type IGZO channel with CuOx insertion layer and p-type silicon channel by TCAD simulations. The TCAD simulation of ultra-compact multi-bit Content Addressable Memory (CAM) design based on an IGZO/Si CFeFET is studied for the first time. The proposed design overcomes the mismatch in memory window (MW) between IGZO-FeFET and Si-FeFET caused by the lack of hole carriers in IGZO-FeFET during erase operation. The 1-bit and multi-bit CAM cell operation are successfully achieved through multi-level cell (MLC) operation of CFeFET with single IGZO-FeFET and Si-FeFET, showing great potential for advanced and high-density non-volatile memory applications.

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KW - IGZO-FeFET

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DO - 10.1109/EDTM65772.2026.11497553

M3 - Conference contribution

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T3 - 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026

BT - 10th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026

Y2 - 1 March 2026 through 4 March 2026

ER -

Guo Z, Yang G, Mo F , Wang Y. Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory. In 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. Institute of Electrical and Electronics Engineers Inc. 2026. (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026). doi: 10.1109/EDTM65772.2026.11497553