Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar

H. B. Huang; X. Q. Ma; Z. H. Liu; C. P. Zhao; S. Q. Shi; L. Q. Chen

doi:10.1063/1.4789867

Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar

H. B. Huang
, X. Q. Ma^*
, Z. H. Liu
, C. P. Zhao
, S. Q. Shi
, L. Q. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

A multilevel cell spin transfer switching process in a full-Heusler Co ₂FeAl_0.5Si_0.5 alloy spin-valve nanopillar was investigated using micromagnetic simulations. An intermediate state of two-step spin transfer magnetization switching was reported due to the four-fold magnetocrystalline anisotropy; however, we discovered the intermediate state has two possible directions of -90° and +90°, which could not be detected in the experiments due to the same resistance of the -90° state and the +90° state. The domain structures were analyzed to determine the mechanism of domain wall motion and magnetization switching under a large current. Based on two intermediate states, we reported a multilevel bit spin transfer multi-step magnetization switching by changing the magnetic anisotropy in a full-Heusler alloy nanopillar.

Original language	English
Article number	042405
Journal	Applied Physics Letters
Volume	102
Issue number	4
DOIs	https://doi.org/10.1063/1.4789867
Publication status	Published - 28 Jan 2013
Externally published	Yes

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title = "Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar",

abstract = "A multilevel cell spin transfer switching process in a full-Heusler Co 2FeAl0.5Si0.5 alloy spin-valve nanopillar was investigated using micromagnetic simulations. An intermediate state of two-step spin transfer magnetization switching was reported due to the four-fold magnetocrystalline anisotropy; however, we discovered the intermediate state has two possible directions of -90° and +90°, which could not be detected in the experiments due to the same resistance of the -90° state and the +90° state. The domain structures were analyzed to determine the mechanism of domain wall motion and magnetization switching under a large current. Based on two intermediate states, we reported a multilevel bit spin transfer multi-step magnetization switching by changing the magnetic anisotropy in a full-Heusler alloy nanopillar.",

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doi = "10.1063/1.4789867",

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T1 - Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar

AU - Huang, H. B.

AU - Ma, X. Q.

AU - Liu, Z. H.

AU - Zhao, C. P.

AU - Shi, S. Q.

AU - Chen, L. Q.

PY - 2013/1/28

Y1 - 2013/1/28

N2 - A multilevel cell spin transfer switching process in a full-Heusler Co 2FeAl0.5Si0.5 alloy spin-valve nanopillar was investigated using micromagnetic simulations. An intermediate state of two-step spin transfer magnetization switching was reported due to the four-fold magnetocrystalline anisotropy; however, we discovered the intermediate state has two possible directions of -90° and +90°, which could not be detected in the experiments due to the same resistance of the -90° state and the +90° state. The domain structures were analyzed to determine the mechanism of domain wall motion and magnetization switching under a large current. Based on two intermediate states, we reported a multilevel bit spin transfer multi-step magnetization switching by changing the magnetic anisotropy in a full-Heusler alloy nanopillar.

AB - A multilevel cell spin transfer switching process in a full-Heusler Co 2FeAl0.5Si0.5 alloy spin-valve nanopillar was investigated using micromagnetic simulations. An intermediate state of two-step spin transfer magnetization switching was reported due to the four-fold magnetocrystalline anisotropy; however, we discovered the intermediate state has two possible directions of -90° and +90°, which could not be detected in the experiments due to the same resistance of the -90° state and the +90° state. The domain structures were analyzed to determine the mechanism of domain wall motion and magnetization switching under a large current. Based on two intermediate states, we reported a multilevel bit spin transfer multi-step magnetization switching by changing the magnetic anisotropy in a full-Heusler alloy nanopillar.

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DO - 10.1063/1.4789867

M3 - Article

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SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042405

ER -

Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar

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