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Simulation of gate-controlled coulomb blockades in carbon nanotubes

  • Y. Q. Feng*
  • , R. Q. Zhang
  • , S. T. Lee
  • *Corresponding author for this work
  • City University of Hong Kong

Research output: Contribution to journalArticlepeer-review

Abstract

The single-electronic transport and Coulomb blockade of several designed carbon nanotube models were studied. The effects of the gate electrode were considered to reveal more abundant transport features of nanotubes. The orthodox theory used a kinetic equation to describe the alteration of the occupation distribution of the charging states in the tubes. The average current was obtained from the probabilities and the forward and backward tunneling rates of the junctions.

Original languageEnglish
Pages (from-to)5729-5735
Number of pages7
JournalJournal of Applied Physics
Volume95
Issue number10
DOIs
Publication statusPublished - 15 May 2004

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