Simulation and analysis of high-temperature and high-g MEMS accelerometer based on SiC

Properties of material greatly influence the performance parameters of accelerators. As a new type of semiconductor materials, SiC has excellent mechanical properties and temperature characteristic, being applicable to high-temperature and high-g accelerator. This paper put forward a design scheme for high-temperature and high-g accelerator based on SiC. The structure and size of accelerator were designed by referring to mechanics theory knowledge of cantilever beam, and characteristics of sensitive structure were analyzed by Modal analysis, statics analysis and thermal analysis on ANSYS. Simulation results show that SiC performs better than Si in high temperature and high overload conditions, which provides reliable theory basis for the research of high-temperature and high-g accelerometer.