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Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1 T-ZrX2(X = Se, Te) at the Two-Dimensional Limit

  • Ming Qiang Ren
  • , Sha Han
  • , Jia Qi Fan
  • , Li Wang
  • , Pengdong Wang
  • , Wei Ren
  • , Kun Peng
  • , Shujing Li
  • , Shu Ze Wang
  • , Fa Wei Zheng
  • , Ping Zhang
  • , Fangsen Li*
  • , Xucun Ma*
  • , Qi Kun Xue*
  • , Can Li Song*
  • *Corresponding author for this work
  • Tsinghua University
  • CAS - Suzhou Institute of Nano-Tech and Nano-Bionics
  • Beijing University of Chemical Technology
  • IAPCM
  • Frontier Science Center for Quantum Information
  • Beijing Academy of Quantum Information Sciences

Research output: Contribution to journalArticlepeer-review

Abstract

A charge density wave (CDW) is a collective quantum phenomenon in metals and features a wavelike modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX2 (X = Se, Te) ultrathin films, accompanied by a commensurate 2 × 2 CDW order. Furthermore, we observed a CDW energy gap of up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX2 films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of a Zr 4d derived elliptical electron conduction band at the corners of the Brillouin zone.

Original languageEnglish
Pages (from-to)476-484
Number of pages9
JournalNano Letters
Volume22
Issue number1
DOIs
Publication statusPublished - 12 Jan 2022
Externally publishedYes

Keywords

  • TMDC
  • charge density wave
  • interface engineering
  • semiconductor-metal transition
  • thin films

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