Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device

Jia Cheng Li; Ying Chen Li; Zi Chun Liu; Yuan Xiao Ma; Ye Liang Wang

doi:10.1109/LED.2024.3455372

Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device

Jia Cheng Li
, Ying Chen Li
, Zi Chun Liu
, Yuan Xiao Ma^*
, Ye Liang Wang^*

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Beijing Institute of Technology
Nankai University

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on C_s0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃ perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for 10⁴ cycles and the retention time is over 104 seconds at 85°C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and C_s0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.

Original language	English
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
DOIs	https://doi.org/10.1109/LED.2024.3455372
Publication status	Accepted/In press - 2024

Keywords

iodide ions
Perovskites memristor
self-rectifying

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10.1109/LED.2024.3455372

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title = "Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device",

abstract = "Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3 perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for 104 cycles and the retention time is over 104 seconds at 85°C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10\%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.",

keywords = "iodide ions, Perovskites memristor, self-rectifying",

author = "Li, \{Jia Cheng\} and Li, \{Ying Chen\} and Liu, \{Zi Chun\} and Ma, \{Yuan Xiao\} and Wang, \{Ye Liang\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2024",

doi = "10.1109/LED.2024.3455372",

language = "English",

journal = "IEEE Transactions on Components, Packaging and Manufacturing Technology",

issn = "2156-3950",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device

AU - Li, Jia Cheng

AU - Li, Ying Chen

AU - Liu, Zi Chun

AU - Ma, Yuan Xiao

AU - Wang, Ye Liang

PY - 2024

Y1 - 2024

N2 - Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3 perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for 104 cycles and the retention time is over 104 seconds at 85°C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.

AB - Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3 perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for 104 cycles and the retention time is over 104 seconds at 85°C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.

KW - iodide ions

KW - Perovskites memristor

KW - self-rectifying

UR - https://www.scopus.com/pages/publications/85204882313

U2 - 10.1109/LED.2024.3455372

DO - 10.1109/LED.2024.3455372

M3 - Article

AN - SCOPUS:85207375542

SN - 2156-3950

JO - IEEE Transactions on Components, Packaging and Manufacturing Technology

JF - IEEE Transactions on Components, Packaging and Manufacturing Technology

ER -

Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device

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Keywords

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