Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device

Jia Cheng Li; Ying Chen Li; Zi Chun Liu; Yuan Xiao Ma; Ye Liang Wang

doi:10.1109/LED.2024.3455372

Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device

Jia Cheng Li, Ying Chen Li, Zi Chun Liu, Yuan Xiao Ma^*, Ye Liang Wang^*

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Research output: Contribution to journal › Article › peer-review

Abstract

Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA 0.83 0.95 Pb I0.83Br0.173 perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for 10⁴ cycles and the retention time is over 10⁴ seconds at 85°C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA 0. 83 0.95 Pb(I0.83Br0.17 3. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.

Original language	English
Pages (from-to)	2106-2109
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	45
Issue number	11
DOIs	https://doi.org/10.1109/LED.2024.3455372
Publication status	Published - 2024

Keywords

iodide ions
Perovskites memristor
self-rectifying

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10.1109/LED.2024.3455372

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title = "Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device",

abstract = "Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA 0.83 0.95 Pb I0.83Br0.173 perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for 104 cycles and the retention time is over 104 seconds at 85°C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA 0. 83 0.95 Pb(I0.83Br0.17 3. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.",

keywords = "iodide ions, Perovskites memristor, self-rectifying",

author = "{Cheng Li}, Jia and {Chen Li}, Ying and {Chun Liu}, Zi and {Xiao Ma}, Yuan and Wang, {Ye Liang}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2024",

doi = "10.1109/LED.2024.3455372",

language = "English",

volume = "45",

pages = "2106--2109",

journal = "IEEE Electron Device Letters",

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T1 - Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device

AU - Cheng Li, Jia

AU - Chen Li, Ying

AU - Chun Liu, Zi

AU - Xiao Ma, Yuan

AU - Wang, Ye Liang

PY - 2024

Y1 - 2024

N2 - Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA 0.83 0.95 Pb I0.83Br0.173 perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for 104 cycles and the retention time is over 104 seconds at 85°C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA 0. 83 0.95 Pb(I0.83Br0.17 3. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.

AB - Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA 0.83 0.95 Pb I0.83Br0.173 perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for 104 cycles and the retention time is over 104 seconds at 85°C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA 0. 83 0.95 Pb(I0.83Br0.17 3. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.

KW - iodide ions

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Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device

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Keywords

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