Self-assembled multilayer film formed by alternating layers of H 4SiW12O40 and a dipolar Ru(II) complex

Yu Qi Zhang; Li Hua Gao; Zhi Ming Duan; Ke Zhi Wang; Ye Liang Wang; Hong Jun Gao

Self-assembled multilayer film formed by alternating layers of H ₄SiW₁₂O₄₀ and a dipolar Ru(II) complex

Yu Qi Zhang^*
, Li Hua Gao
, Zhi Ming Duan
, Ke Zhi Wang
, Ye Liang Wang
, Hong Jun Gao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A new self-assembled multilayer film has been prepared by alternating electrostatic adsorption of H₄SiW₁₂-O₄₀ and a dipolar Ru(II) complex, and characterized by UV-visible spectroscopy and cyclic voltammetry. The results showed that the film was uniform and electrochemically active, and the charge transfer may occur between H₄SiW ₁₂O₄₀ and the Ru(II) complex in the film. Atomic force microscopy images indicated that the morphologies of outer Ru(II) complex and H₄SiW₁₂O₄₀ layers were of distinctly different domain structures.

Original language	English
Pages (from-to)	738-741
Number of pages	4
Journal	Acta Chimica Sinica
Volume	62
Issue number	7
Publication status	Published - 2004
Externally published	Yes

Keywords

Ruthenium(II) complex
Self-assembled film
Silicotungstic acid

Cite this

@article{7cc38b7706604b26a30b332544aba941,

title = "Self-assembled multilayer film formed by alternating layers of H 4SiW12O40 and a dipolar Ru(II) complex",

abstract = "A new self-assembled multilayer film has been prepared by alternating electrostatic adsorption of H4SiW12-O40 and a dipolar Ru(II) complex, and characterized by UV-visible spectroscopy and cyclic voltammetry. The results showed that the film was uniform and electrochemically active, and the charge transfer may occur between H4SiW 12O40 and the Ru(II) complex in the film. Atomic force microscopy images indicated that the morphologies of outer Ru(II) complex and H4SiW12O40 layers were of distinctly different domain structures.",

keywords = "Ruthenium(II) complex, Self-assembled film, Silicotungstic acid",

author = "Zhang, \{Yu Qi\} and Gao, \{Li Hua\} and Duan, \{Zhi Ming\} and Wang, \{Ke Zhi\} and Wang, \{Ye Liang\} and Gao, \{Hong Jun\}",

year = "2004",

language = "English",

volume = "62",

pages = "738--741",

journal = "Acta Chimica Sinica",

issn = "0567-7351",

publisher = "Editorial Office of Acta Chimica Sinica",

number = "7",

}

TY - JOUR

T1 - Self-assembled multilayer film formed by alternating layers of H 4SiW12O40 and a dipolar Ru(II) complex

AU - Zhang, Yu Qi

AU - Gao, Li Hua

AU - Duan, Zhi Ming

AU - Wang, Ke Zhi

AU - Wang, Ye Liang

AU - Gao, Hong Jun

PY - 2004

Y1 - 2004

N2 - A new self-assembled multilayer film has been prepared by alternating electrostatic adsorption of H4SiW12-O40 and a dipolar Ru(II) complex, and characterized by UV-visible spectroscopy and cyclic voltammetry. The results showed that the film was uniform and electrochemically active, and the charge transfer may occur between H4SiW 12O40 and the Ru(II) complex in the film. Atomic force microscopy images indicated that the morphologies of outer Ru(II) complex and H4SiW12O40 layers were of distinctly different domain structures.

AB - A new self-assembled multilayer film has been prepared by alternating electrostatic adsorption of H4SiW12-O40 and a dipolar Ru(II) complex, and characterized by UV-visible spectroscopy and cyclic voltammetry. The results showed that the film was uniform and electrochemically active, and the charge transfer may occur between H4SiW 12O40 and the Ru(II) complex in the film. Atomic force microscopy images indicated that the morphologies of outer Ru(II) complex and H4SiW12O40 layers were of distinctly different domain structures.

KW - Ruthenium(II) complex

KW - Self-assembled film

KW - Silicotungstic acid

UR - https://www.scopus.com/pages/publications/33750495867

M3 - Article

AN - SCOPUS:33750495867

SN - 0567-7351

VL - 62

SP - 738

EP - 741

JO - Acta Chimica Sinica

JF - Acta Chimica Sinica

IS - 7

ER -

Self-assembled multilayer film formed by alternating layers of H ₄SiW₁₂O₄₀ and a dipolar Ru(II) complex

Abstract

Keywords

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