Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)

Han Huang; Swee Liang Wong; Yuzhan Wang; Jia Tao Sun; Xingyu Gao; Andrew Thye Shen Wee

doi:10.1021/jp507072p

Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)

Han Huang^*, Swee Liang Wong, Yuzhan Wang, Jia Tao Sun, Xingyu Gao, Andrew Thye Shen Wee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011¯2) ∥ EG(0001) and Bi〈112¯0〉 aligned well with EG〈112¯0〉. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.

Original language	English
Pages (from-to)	24995-24999
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	118
Issue number	43
DOIs	https://doi.org/10.1021/jp507072p
Publication status	Published - 30 Oct 2014
Externally published	Yes

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title = "Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)",

abstract = "The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011¯2) ∥ EG(0001) and Bi〈112¯0〉 aligned well with EG〈112¯0〉. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.",

author = "Han Huang and Wong, \{Swee Liang\} and Yuzhan Wang and Sun, \{Jia Tao\} and Xingyu Gao and Wee, \{Andrew Thye Shen\}",

note = "Publisher Copyright: {\textcopyright} 2014 American Chemical Society.",

year = "2014",

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day = "30",

doi = "10.1021/jp507072p",

language = "English",

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T1 - Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)

AU - Huang, Han

AU - Wong, Swee Liang

AU - Wang, Yuzhan

AU - Sun, Jia Tao

AU - Gao, Xingyu

AU - Wee, Andrew Thye Shen

PY - 2014/10/30

Y1 - 2014/10/30

N2 - The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011¯2) ∥ EG(0001) and Bi〈112¯0〉 aligned well with EG〈112¯0〉. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.

AB - The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011¯2) ∥ EG(0001) and Bi〈112¯0〉 aligned well with EG〈112¯0〉. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.

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U2 - 10.1021/jp507072p

DO - 10.1021/jp507072p

M3 - Article

AN - SCOPUS:84908575753

SN - 1932-7447

VL - 118

SP - 24995

EP - 24999

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 43

ER -

Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)

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