Scalable fabrication of ambipolar transistors and radio-frequency circuits using aligned carbon nanotube arrays

Zhenxing Wang; Shibo Liang; Zhiyong Zhang; Honggang Liu; Hua Zhong; Lin Hui Ye; Sheng Wang; Weiwei Zhou; Jie Liu; Yabin Chen; Jin Zhang; Lian Mao Peng

doi:10.1002/adma.201302793

Scalable fabrication of ambipolar transistors and radio-frequency circuits using aligned carbon nanotube arrays

Zhenxing Wang
, Shibo Liang
, Zhiyong Zhang^*
, Honggang Liu
, Hua Zhong
, Lin Hui Ye
, Sheng Wang
, Weiwei Zhou
, Jie Liu
, Yabin Chen
, Jin Zhang
, Lian Mao Peng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Field-effect transistors (FETs) are fabricated on a large scale and with a high yield of over 95% based on aligned carbon nanotube arrays directly grown on quartz, and exhibit ambipolar transfer characteristics that can be used to construct ambipolar RF circuits. RF circuits including frequency doubler and mixer based on the ambipolar FETs demonstrate unequivocally working frequency up to 40 GHz.

Original language	English
Pages (from-to)	645-652
Number of pages	8
Journal	Advanced Materials
Volume	26
Issue number	4
DOIs	https://doi.org/10.1002/adma.201302793
Publication status	Published - 29 Jan 2014
Externally published	Yes

Keywords

ambipolar transistors
carbon nanotubes (CNTs)
frequency doubler
frequency mixers
radio-frequency

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10.1002/adma.201302793

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abstract = "Field-effect transistors (FETs) are fabricated on a large scale and with a high yield of over 95\% based on aligned carbon nanotube arrays directly grown on quartz, and exhibit ambipolar transfer characteristics that can be used to construct ambipolar RF circuits. RF circuits including frequency doubler and mixer based on the ambipolar FETs demonstrate unequivocally working frequency up to 40 GHz.",

keywords = "ambipolar transistors, carbon nanotubes (CNTs), frequency doubler, frequency mixers, radio-frequency",

author = "Zhenxing Wang and Shibo Liang and Zhiyong Zhang and Honggang Liu and Hua Zhong and Ye, \{Lin Hui\} and Sheng Wang and Weiwei Zhou and Jie Liu and Yabin Chen and Jin Zhang and Peng, \{Lian Mao\}",

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AU - Wang, Zhenxing

AU - Liang, Shibo

AU - Zhang, Zhiyong

AU - Liu, Honggang

AU - Zhong, Hua

AU - Ye, Lin Hui

AU - Wang, Sheng

AU - Zhou, Weiwei

AU - Liu, Jie

AU - Chen, Yabin

AU - Zhang, Jin

AU - Peng, Lian Mao

PY - 2014/1/29

Y1 - 2014/1/29

N2 - Field-effect transistors (FETs) are fabricated on a large scale and with a high yield of over 95% based on aligned carbon nanotube arrays directly grown on quartz, and exhibit ambipolar transfer characteristics that can be used to construct ambipolar RF circuits. RF circuits including frequency doubler and mixer based on the ambipolar FETs demonstrate unequivocally working frequency up to 40 GHz.

AB - Field-effect transistors (FETs) are fabricated on a large scale and with a high yield of over 95% based on aligned carbon nanotube arrays directly grown on quartz, and exhibit ambipolar transfer characteristics that can be used to construct ambipolar RF circuits. RF circuits including frequency doubler and mixer based on the ambipolar FETs demonstrate unequivocally working frequency up to 40 GHz.

KW - ambipolar transistors

KW - carbon nanotubes (CNTs)

KW - frequency doubler

KW - frequency mixers

KW - radio-frequency

UR - https://www.scopus.com/pages/publications/84892927390

U2 - 10.1002/adma.201302793

DO - 10.1002/adma.201302793

M3 - Article

AN - SCOPUS:84892927390

SN - 0935-9648

VL - 26

SP - 645

EP - 652

JO - Advanced Materials

JF - Advanced Materials

IS - 4

ER -

Scalable fabrication of ambipolar transistors and radio-frequency circuits using aligned carbon nanotube arrays

Abstract

Keywords

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