Sb2O3/BiVO4/WO3 异质结构建及光电催化合成过氧化氢

Yin Qiong Xie; Shi Tang; Shan Shan Wang; Xin Lian; Wen Long Guo; Xi Liu

doi:10.11862/CJIC.2023.022

Sb₂O₃/BiVO₄/WO₃ 异质结构建及光电催化合成过氧化氢

Translated title of the contribution: Construction of Sb₂O₃/BiVO₄/WO₃ heterojunction for photoelectrocatalytic synthesis of hydrogen peroxide

Yin Qiong Xie, Shi Tang, Shan Shan Wang, Xin Lian, Wen Long Guo^*, Xi Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Sb₂O₃/BiVO₄/WO₃ semiconductor heterojunctions were constructed by solvothermal method and spin coating method, and X‐ray diffraction, scanning electron microscopy, and X‐ray photoelectron spectroscopy were used to characterize the physical and chemical properties. The photocurrent density of BiVO₄/WO₃ was increased by two times compared with BiVO₄ at 1.23 V (vs RHE). Although further coating with Sb₂O₃ decreased the photocurrent density of Sb₂O₃/BiVO₄/WO₃ film, the Faraday efficiency and production rate of H₂O₂ were improved. At 1.89 V (vs RHE), the Faraday efficiency of 3c‐Sb₂O₃/BiVO₄/WO₃ film was enhanced to ca. 19%; the production rate of H₂O₂ of 1c‐Sb₂O₃/BiVO₄/WO₃ film increased from ca. 2.1 to ca. 3.6 μmol·h^-1·cm^-2. In addition, the coating of Sb₂O₃ significantly improved the photoelectrocatalytic stability of BiVO₄/WO₃ electrode.

Translated title of the contribution	Construction of Sb₂O₃/BiVO₄/WO₃ heterojunction for photoelectrocatalytic synthesis of hydrogen peroxide
Original language	Chinese (Traditional)
Pages (from-to)	433-442
Number of pages	10
Journal	Chinese Journal of Inorganic Chemistry
Volume	39
Issue number	3
DOIs	https://doi.org/10.11862/CJIC.2023.022
Publication status	Published - 2023
Externally published	Yes

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10.11862/CJIC.2023.022

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@article{0a5eeefbf0a34ae0a998319c8ce89010,

title = "Sb2O3/BiVO4/WO3 异质结构建及光电催化合成过氧化氢",

abstract = "Sb2O3/BiVO4/WO3 semiconductor heterojunctions were constructed by solvothermal method and spin coating method, and X‐ray diffraction, scanning electron microscopy, and X‐ray photoelectron spectroscopy were used to characterize the physical and chemical properties. The photocurrent density of BiVO4/WO3 was increased by two times compared with BiVO4 at 1.23 V (vs RHE). Although further coating with Sb2O3 decreased the photocurrent density of Sb2O3/BiVO4/WO3 film, the Faraday efficiency and production rate of H2O2 were improved. At 1.89 V (vs RHE), the Faraday efficiency of 3c‐Sb2O3/BiVO4/WO3 film was enhanced to ca. 19\%; the production rate of H2O2 of 1c‐Sb2O3/BiVO4/WO3 film increased from ca. 2.1 to ca. 3.6 μmol·h-1·cm-2. In addition, the coating of Sb2O3 significantly improved the photoelectrocatalytic stability of BiVO4/WO3 electrode.",

keywords = "SbO/BiVO/WO heterojunction, hydrogen peroxide, photoelectrocatalysis, water oxidation reaction",

author = "Xie, \{Yin Qiong\} and Shi Tang and Wang, \{Shan Shan\} and Xin Lian and Guo, \{Wen Long\} and Xi Liu",

year = "2023",

doi = "10.11862/CJIC.2023.022",

language = "繁体中文",

volume = "39",

pages = "433--442",

journal = "Chinese Journal of Inorganic Chemistry",

issn = "1001-4861",

publisher = "Chinese Chemical Society",

number = "3",

}

TY - JOUR

T1 - Sb2O3/BiVO4/WO3 异质结构建及光电催化合成过氧化氢

AU - Xie, Yin Qiong

AU - Tang, Shi

AU - Wang, Shan Shan

AU - Lian, Xin

AU - Guo, Wen Long

AU - Liu, Xi

PY - 2023

Y1 - 2023

N2 - Sb2O3/BiVO4/WO3 semiconductor heterojunctions were constructed by solvothermal method and spin coating method, and X‐ray diffraction, scanning electron microscopy, and X‐ray photoelectron spectroscopy were used to characterize the physical and chemical properties. The photocurrent density of BiVO4/WO3 was increased by two times compared with BiVO4 at 1.23 V (vs RHE). Although further coating with Sb2O3 decreased the photocurrent density of Sb2O3/BiVO4/WO3 film, the Faraday efficiency and production rate of H2O2 were improved. At 1.89 V (vs RHE), the Faraday efficiency of 3c‐Sb2O3/BiVO4/WO3 film was enhanced to ca. 19%; the production rate of H2O2 of 1c‐Sb2O3/BiVO4/WO3 film increased from ca. 2.1 to ca. 3.6 μmol·h-1·cm-2. In addition, the coating of Sb2O3 significantly improved the photoelectrocatalytic stability of BiVO4/WO3 electrode.

AB - Sb2O3/BiVO4/WO3 semiconductor heterojunctions were constructed by solvothermal method and spin coating method, and X‐ray diffraction, scanning electron microscopy, and X‐ray photoelectron spectroscopy were used to characterize the physical and chemical properties. The photocurrent density of BiVO4/WO3 was increased by two times compared with BiVO4 at 1.23 V (vs RHE). Although further coating with Sb2O3 decreased the photocurrent density of Sb2O3/BiVO4/WO3 film, the Faraday efficiency and production rate of H2O2 were improved. At 1.89 V (vs RHE), the Faraday efficiency of 3c‐Sb2O3/BiVO4/WO3 film was enhanced to ca. 19%; the production rate of H2O2 of 1c‐Sb2O3/BiVO4/WO3 film increased from ca. 2.1 to ca. 3.6 μmol·h-1·cm-2. In addition, the coating of Sb2O3 significantly improved the photoelectrocatalytic stability of BiVO4/WO3 electrode.

KW - SbO/BiVO/WO heterojunction

KW - hydrogen peroxide

KW - photoelectrocatalysis

KW - water oxidation reaction

UR - https://www.scopus.com/pages/publications/85179052790

U2 - 10.11862/CJIC.2023.022

DO - 10.11862/CJIC.2023.022

M3 - 文章

AN - SCOPUS:85179052790

SN - 1001-4861

VL - 39

SP - 433

EP - 442

JO - Chinese Journal of Inorganic Chemistry

JF - Chinese Journal of Inorganic Chemistry

IS - 3

ER -

Sb₂O₃/BiVO₄/WO₃ 异质结构建及光电催化合成过氧化氢

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