Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

Changcheng Hu; Huiqi Ye; Gang Wang; Haitao Tian; Wenxin Wang; Wenquan Wang; Baoli Liu; Xavier Marie

doi:10.1186/1556-276X-6-149

Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

Changcheng Hu^*
, Huiqi Ye
, Gang Wang
, Haitao Tian
, Wenxin Wang
, Wenquan Wang
, Baoli Liu
, Xavier Marie

^*Corresponding author for this work

Jilin University
CAS - Institute of Physics
Université de Toulouse

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient D_s.

Original language	English
Article number	149
Journal	Nanoscale Research Letters
Volume	6
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-6-149
Publication status	Published - Jan 2011
Externally published	Yes

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title = "Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells",

abstract = "Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.",

author = "Changcheng Hu and Huiqi Ye and Gang Wang and Haitao Tian and Wenxin Wang and Wenquan Wang and Baoli Liu and Xavier Marie",

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AU - Hu, Changcheng

AU - Ye, Huiqi

AU - Wang, Gang

AU - Tian, Haitao

AU - Wang, Wenxin

AU - Wang, Wenquan

AU - Liu, Baoli

AU - Marie, Xavier

PY - 2011/1

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N2 - Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.

AB - Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.

UR - https://www.scopus.com/pages/publications/82655177884

U2 - 10.1186/1556-276X-6-149

DO - 10.1186/1556-276X-6-149

M3 - Article

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VL - 6

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

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ER -

Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

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