Room-Temperature Near-Infrared Lasing from GaAs/AlGaAs Core-Shell Nanowires Based on Random Cavity

Bingheng Meng; Yubin Kang; Xuanyu Zhang; Xuanchi Yu; Shan Wang; Puning Wang; Jilong Tang; Qun Hao; Zhipeng Wei; Rui Chen

doi:10.1021/acsami.4c06544

Room-Temperature Near-Infrared Lasing from GaAs/AlGaAs Core-Shell Nanowires Based on Random Cavity

Bingheng Meng, Yubin Kang, Xuanyu Zhang, Xuanchi Yu, Shan Wang, Puning Wang, Jilong Tang, Qun Hao^*, Zhipeng Wei^*, Rui Chen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Room-temperature lasing based on low-dimensional GaAs nanowires (NWs) is one of the most critical and challenging issues in realizing near-infrared lasers for nanophotonics. In this article, the random lasing characteristics based on GaAs NW arrays have been discussed theoretically. According to the simulation, GaAs/AlGaAs core-shell NWs with an optimal diameter, density, and Al content in the shell have been grown. Systematic morphological and optical characterizations were carried out. It is found that the GaAs NWs with the additional growth of the AlGaAs shell exhibit improved emission by about 2 orders of magnitude at low temperatures, which can be attributed to the suppression of crystal defects. At room temperature, lasing was observed with a threshold around 70.16 mW/cm², and the random lasing mechanism was discussed in detail. This work is of great significance for the design of random cavities based on semiconductor NWs, which is important for optoelectronic integration.

Original language	English
Pages (from-to)	41677-41683
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	16
Issue number	31
DOIs	https://doi.org/10.1021/acsami.4c06544
Publication status	Published - 7 Aug 2024
Externally published	Yes

Keywords

core-shell nanowires
defects
GaAs nanowires
optical property
random cavity

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10.1021/acsami.4c06544

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title = "Room-Temperature Near-Infrared Lasing from GaAs/AlGaAs Core-Shell Nanowires Based on Random Cavity",

abstract = "Room-temperature lasing based on low-dimensional GaAs nanowires (NWs) is one of the most critical and challenging issues in realizing near-infrared lasers for nanophotonics. In this article, the random lasing characteristics based on GaAs NW arrays have been discussed theoretically. According to the simulation, GaAs/AlGaAs core-shell NWs with an optimal diameter, density, and Al content in the shell have been grown. Systematic morphological and optical characterizations were carried out. It is found that the GaAs NWs with the additional growth of the AlGaAs shell exhibit improved emission by about 2 orders of magnitude at low temperatures, which can be attributed to the suppression of crystal defects. At room temperature, lasing was observed with a threshold around 70.16 mW/cm2, and the random lasing mechanism was discussed in detail. This work is of great significance for the design of random cavities based on semiconductor NWs, which is important for optoelectronic integration.",

keywords = "core-shell nanowires, defects, GaAs nanowires, optical property, random cavity",

author = "Bingheng Meng and Yubin Kang and Xuanyu Zhang and Xuanchi Yu and Shan Wang and Puning Wang and Jilong Tang and Qun Hao and Zhipeng Wei and Rui Chen",

note = "Publisher Copyright: {\textcopyright} 2024 American Chemical Society.",

year = "2024",

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doi = "10.1021/acsami.4c06544",

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T1 - Room-Temperature Near-Infrared Lasing from GaAs/AlGaAs Core-Shell Nanowires Based on Random Cavity

AU - Meng, Bingheng

AU - Kang, Yubin

AU - Zhang, Xuanyu

AU - Yu, Xuanchi

AU - Wang, Shan

AU - Wang, Puning

AU - Tang, Jilong

AU - Hao, Qun

AU - Wei, Zhipeng

AU - Chen, Rui

PY - 2024/8/7

Y1 - 2024/8/7

N2 - Room-temperature lasing based on low-dimensional GaAs nanowires (NWs) is one of the most critical and challenging issues in realizing near-infrared lasers for nanophotonics. In this article, the random lasing characteristics based on GaAs NW arrays have been discussed theoretically. According to the simulation, GaAs/AlGaAs core-shell NWs with an optimal diameter, density, and Al content in the shell have been grown. Systematic morphological and optical characterizations were carried out. It is found that the GaAs NWs with the additional growth of the AlGaAs shell exhibit improved emission by about 2 orders of magnitude at low temperatures, which can be attributed to the suppression of crystal defects. At room temperature, lasing was observed with a threshold around 70.16 mW/cm2, and the random lasing mechanism was discussed in detail. This work is of great significance for the design of random cavities based on semiconductor NWs, which is important for optoelectronic integration.

AB - Room-temperature lasing based on low-dimensional GaAs nanowires (NWs) is one of the most critical and challenging issues in realizing near-infrared lasers for nanophotonics. In this article, the random lasing characteristics based on GaAs NW arrays have been discussed theoretically. According to the simulation, GaAs/AlGaAs core-shell NWs with an optimal diameter, density, and Al content in the shell have been grown. Systematic morphological and optical characterizations were carried out. It is found that the GaAs NWs with the additional growth of the AlGaAs shell exhibit improved emission by about 2 orders of magnitude at low temperatures, which can be attributed to the suppression of crystal defects. At room temperature, lasing was observed with a threshold around 70.16 mW/cm2, and the random lasing mechanism was discussed in detail. This work is of great significance for the design of random cavities based on semiconductor NWs, which is important for optoelectronic integration.

KW - core-shell nanowires

KW - defects

KW - GaAs nanowires

KW - optical property

KW - random cavity

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JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

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ER -

Room-Temperature Near-Infrared Lasing from GaAs/AlGaAs Core-Shell Nanowires Based on Random Cavity

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Keywords

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