Room-Temperature, Low-Barrier Boron Doping of Graphene

Lida Pan; Yande Que; Hui Chen; Dongfei Wang; Jun Li; Chengmin Shen; Wende Xiao; Shixuan Du; Hongjun Gao; Sokrates T. Pantelides

doi:10.1021/acs.nanolett.5b01839

Room-Temperature, Low-Barrier Boron Doping of Graphene

Lida Pan
, Yande Que
, Hui Chen
, Dongfei Wang
, Jun Li
, Chengmin Shen
, Wende Xiao
, Shixuan Du^*
, Hongjun Gao
, Sokrates T. Pantelides^*

^*Corresponding author for this work

Vanderbilt University
CAS - Institute of Physics
Oak Ridge National Laboratory

Research output: Contribution to journal › Letter › peer-review

29 Citations (Scopus)

Abstract

Doping graphene with boron has been difficult because of high reaction barriers. Here, we describe a low-energy reaction route derived from first-principles calculations and validated by experiments. We find that a boron atom on graphene on a ruthenium(0001) substrate can replace a carbon by pushing it through, with substrate attraction helping to reduce the barrier to only 0.1 eV, implying that the doping can take place at room temperature. High-quality graphene is grown on a Ru(0001) surface and exposed to B₂H₆. Scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy confirmed that boron is indeed incorporated substitutionally without disturbing the graphene lattice.

Original language	English
Pages (from-to)	6464-6468
Number of pages	5
Journal	Nano Letters
Volume	15
Issue number	10
DOIs	https://doi.org/10.1021/acs.nanolett.5b01839
Publication status	Published - 14 Oct 2015
Externally published	Yes

Keywords

boron-doped graphene
first-principles calculations
scanning tunneling microscopy
scanning tunneling spectroscopy

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10.1021/acs.nanolett.5b01839

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title = "Room-Temperature, Low-Barrier Boron Doping of Graphene",

abstract = "Doping graphene with boron has been difficult because of high reaction barriers. Here, we describe a low-energy reaction route derived from first-principles calculations and validated by experiments. We find that a boron atom on graphene on a ruthenium(0001) substrate can replace a carbon by pushing it through, with substrate attraction helping to reduce the barrier to only 0.1 eV, implying that the doping can take place at room temperature. High-quality graphene is grown on a Ru(0001) surface and exposed to B2H6. Scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy confirmed that boron is indeed incorporated substitutionally without disturbing the graphene lattice.",

keywords = "boron-doped graphene, first-principles calculations, scanning tunneling microscopy, scanning tunneling spectroscopy",

author = "Lida Pan and Yande Que and Hui Chen and Dongfei Wang and Jun Li and Chengmin Shen and Wende Xiao and Shixuan Du and Hongjun Gao and Pantelides, \{Sokrates T.\}",

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doi = "10.1021/acs.nanolett.5b01839",

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volume = "15",

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TY - JOUR

T1 - Room-Temperature, Low-Barrier Boron Doping of Graphene

AU - Pan, Lida

AU - Que, Yande

AU - Chen, Hui

AU - Wang, Dongfei

AU - Li, Jun

AU - Shen, Chengmin

AU - Xiao, Wende

AU - Du, Shixuan

AU - Gao, Hongjun

AU - Pantelides, Sokrates T.

PY - 2015/10/14

Y1 - 2015/10/14

N2 - Doping graphene with boron has been difficult because of high reaction barriers. Here, we describe a low-energy reaction route derived from first-principles calculations and validated by experiments. We find that a boron atom on graphene on a ruthenium(0001) substrate can replace a carbon by pushing it through, with substrate attraction helping to reduce the barrier to only 0.1 eV, implying that the doping can take place at room temperature. High-quality graphene is grown on a Ru(0001) surface and exposed to B2H6. Scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy confirmed that boron is indeed incorporated substitutionally without disturbing the graphene lattice.

AB - Doping graphene with boron has been difficult because of high reaction barriers. Here, we describe a low-energy reaction route derived from first-principles calculations and validated by experiments. We find that a boron atom on graphene on a ruthenium(0001) substrate can replace a carbon by pushing it through, with substrate attraction helping to reduce the barrier to only 0.1 eV, implying that the doping can take place at room temperature. High-quality graphene is grown on a Ru(0001) surface and exposed to B2H6. Scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy confirmed that boron is indeed incorporated substitutionally without disturbing the graphene lattice.

KW - boron-doped graphene

KW - first-principles calculations

KW - scanning tunneling microscopy

KW - scanning tunneling spectroscopy

UR - https://www.scopus.com/pages/publications/84944345176

U2 - 10.1021/acs.nanolett.5b01839

DO - 10.1021/acs.nanolett.5b01839

M3 - Letter

AN - SCOPUS:84944345176

SN - 1530-6984

VL - 15

SP - 6464

EP - 6468

JO - Nano Letters

JF - Nano Letters

IS - 10

ER -

Room-Temperature, Low-Barrier Boron Doping of Graphene

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Keywords

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