Robust polarization switching in self-assembled BiFeO3 nanoislands with quad-domain structures

  • Mingfeng Chen
  • , Ji Ma
  • , Ren Ci Peng
  • , Qinghua Zhang
  • , Jing Wang
  • , Yuhan Liang
  • , Jialu Wu
  • , Long Qing Chen
  • , Jing Ma*
  • , Ce Wen Nan
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Miniaturizing ferroic oxides is essential for studying the fundamental physics of low-dimensional topological defects such as flux-closure vortex as well as the applications of future nanoelectronic devices. Here, we successfully synthesized self-assembled BiFeO3 nanoislands on LaAlO3 (001) substrate by pulsed laser deposition. Center-type quad-domains are spontaneously stabilized in these nanostructures, and the polarization vectors of each quarter can be independently switched with robust retention properties over time and elevated temperature. As a result, the long-sought exotic domain structures such as anti-vertex can be created in these nanoislands by selectively switching polarization state of certain quarters. Resistive switching effect is also confirmed in quarters of the nanoisland, indicating the great potential as memory cells in high density ferroelectric random access memory.

Original languageEnglish
Pages (from-to)324-330
Number of pages7
JournalActa Materialia
Volume175
DOIs
Publication statusPublished - 15 Aug 2019
Externally publishedYes

Keywords

  • BFO nanoislands
  • Exotic domain structure
  • Ferroelectric random access memory
  • Nanoelectronics

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