Reversible Semimetal-Semiconductor Transition of Unconventional-Phase WS2 Nanosheets

  • Wei Zhai
  • , Junlei Qi
  • , Chao Xu
  • , Bo Chen
  • , Zijian Li
  • , Yongji Wang
  • , Li Zhai
  • , Yao Yao
  • , Siyuan Li
  • , Qinghua Zhang
  • , Yiyao Ge
  • , Banlan Chi
  • , Yi Ren
  • , Zhiqi Huang
  • , Zhuangchai Lai
  • , Lin Gu
  • , Ye Zhu*
  • , Qiyuan He*
  • , Hua Zhang*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Phase transition with band gap modulation of materials has gained intensive research attention due to its various applications, including memories, neuromorphic computing, and transistors. As a powerful strategy to tune the crystal phase of transition-metal dichalcogenides (TMDs), the phase transition of TMDs provides opportunities to prepare new phases of TMDs for exploring their phase-dependent property, function, and application. However, the previously reported phase transition of TMDs is mainly irreversible. Here, we report a reversible phase transition in the semimetallic 1T′-WS2 driven by proton intercalation and deintercalation, resulting in a newly discovered semiconducting WS2 with a novel unconventional phase, denoted as the 1T′d phase. Impressively, an on/off ratio of >106 has been achieved during the phase transition of WS2 from the semimetallic 1T′ phase to the semiconducting 1T′d phase. Our work not only provides a unique insight into the phase transition of TMDs via proton intercalation but also opens up possibilities to tune their physicochemical properties for various applications.

Original languageEnglish
Pages (from-to)13444-13451
Number of pages8
JournalJournal of the American Chemical Society
Volume145
Issue number24
DOIs
Publication statusPublished - 21 Jun 2023
Externally publishedYes

Fingerprint

Dive into the research topics of 'Reversible Semimetal-Semiconductor Transition of Unconventional-Phase WS2 Nanosheets'. Together they form a unique fingerprint.

Cite this