Resonant intrinsic spin hall effect in p-type GaAs quantum well structure

  • Xi Dai*
  • , Zhong Fang
  • , Yu Gui Yao
  • , Fu Chun Zhang
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level crossing in the lowest heavy hole subband, which gives rise to a resonant spin Hall conductance. The resonance may be used to identify the intrinsic spin Hall effect in experiments.

Original languageEnglish
Article number086802
JournalPhysical Review Letters
Volume96
Issue number8
DOIs
Publication statusPublished - 2006
Externally publishedYes

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