Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application

Fei Mo; Takuya Saraya; Toshiro Hiramoto; Masaharu Kobayashi

doi:10.35848/1882-0786/ab9a92

Reliability characteristics of metal/ferroelectric-HfO₂/IGZO/metal capacitor for non-volatile memory application

Fei Mo^*, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi

^*Corresponding author for this work

The University of Tokyo

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

A metal/ferroelectric (FE)-HfO2/IGZO/metal capacitor was fabricated and investigated for 3D high-density memory application. The sharp interface is obtained without atomic interdiffusion. The capacitor shows ferroelectricity with a IGZO capping layer. The endurance and retention measurement show that the capacitor has up to 108 program/erase endurance cycles and a 10 year retention, respectively. The capacitor does not show the wake-up effect, which is beneficial for circuit design and manufacturing. The asymmetric imprint effect is attributed to the different band modulation in the accumulation and depletion states of IGZO.

Original language	English
Article number	074005
Journal	Applied Physics Express
Volume	13
Issue number	7
DOIs	https://doi.org/10.35848/1882-0786/ab9a92
Publication status	Published - 1 Jul 2020
Externally published	Yes

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@article{5d62049bbc1f40f18cd3c1cba235092b,

title = "Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application",

abstract = "A metal/ferroelectric (FE)-HfO2/IGZO/metal capacitor was fabricated and investigated for 3D high-density memory application. The sharp interface is obtained without atomic interdiffusion. The capacitor shows ferroelectricity with a IGZO capping layer. The endurance and retention measurement show that the capacitor has up to 108 program/erase endurance cycles and a 10 year retention, respectively. The capacitor does not show the wake-up effect, which is beneficial for circuit design and manufacturing. The asymmetric imprint effect is attributed to the different band modulation in the accumulation and depletion states of IGZO.",

author = "Fei Mo and Takuya Saraya and Toshiro Hiramoto and Masaharu Kobayashi",

note = "Publisher Copyright: {\textcopyright} 2020 The Japan Society of Applied Physics.",

year = "2020",

month = jul,

day = "1",

doi = "10.35848/1882-0786/ab9a92",

language = "English",

volume = "13",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "7",

}

TY - JOUR

T1 - Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application

AU - Mo, Fei

AU - Saraya, Takuya

AU - Hiramoto, Toshiro

AU - Kobayashi, Masaharu

PY - 2020/7/1

Y1 - 2020/7/1

N2 - A metal/ferroelectric (FE)-HfO2/IGZO/metal capacitor was fabricated and investigated for 3D high-density memory application. The sharp interface is obtained without atomic interdiffusion. The capacitor shows ferroelectricity with a IGZO capping layer. The endurance and retention measurement show that the capacitor has up to 108 program/erase endurance cycles and a 10 year retention, respectively. The capacitor does not show the wake-up effect, which is beneficial for circuit design and manufacturing. The asymmetric imprint effect is attributed to the different band modulation in the accumulation and depletion states of IGZO.

AB - A metal/ferroelectric (FE)-HfO2/IGZO/metal capacitor was fabricated and investigated for 3D high-density memory application. The sharp interface is obtained without atomic interdiffusion. The capacitor shows ferroelectricity with a IGZO capping layer. The endurance and retention measurement show that the capacitor has up to 108 program/erase endurance cycles and a 10 year retention, respectively. The capacitor does not show the wake-up effect, which is beneficial for circuit design and manufacturing. The asymmetric imprint effect is attributed to the different band modulation in the accumulation and depletion states of IGZO.

UR - https://www.scopus.com/pages/publications/85091441855

U2 - 10.35848/1882-0786/ab9a92

DO - 10.35848/1882-0786/ab9a92

M3 - Article

AN - SCOPUS:85091441855

SN - 1882-0778

VL - 13

JO - Applied Physics Express

JF - Applied Physics Express

IS - 7

M1 - 074005

ER -

Reliability characteristics of metal/ferroelectric-HfO₂/IGZO/metal capacitor for non-volatile memory application

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