Relaxed and strained patterned germanium-tin structures: A Raman scattering study

Ran Cheng; Wei Wang; Xiao Gong; Linfeng Sun; Pengfei Guo; Hailong Hu; Zexiang Shen; Genquan Han; Yee Chia Yeo

doi:10.1149/2.013304jss

Relaxed and strained patterned germanium-tin structures: A Raman scattering study

Ran Cheng
, Wei Wang
, Xiao Gong
, Linfeng Sun
, Pengfei Guo
, Hailong Hu
, Zexiang Shen
, Genquan Han
, Yee Chia Yeo

National University of Singapore
Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

69 Citations (Scopus)

Abstract

We report the first realization of fully-released and relaxed Ge _1-xSn_x structures on Ge substrate. The coefficients of Raman peak shift a and b due to the alloy disorder and strain, respectively, were experimentally obtained for Ge_1-xSn_x. In addition, to lower the Sn composition needed to achieve direct bandgap Ge _1-xSn_x alloys and also to realize channel materials with higher electron mobility, uniaxially tensile strained Ge_1-xSn _x patterns were fabricated. Large tensile strain (>1%) was detected in the patterned Ge_1-xSn_x lines. Such tensile-strained Ge_1-xSn_x structures could enable the realization of Group-IV optoelectronic devices and high mobility n-channel transistors.

Original language	English
Pages (from-to)	P138-P145
Journal	ECS Journal of Solid State Science and Technology
Volume	2
Issue number	4
DOIs	https://doi.org/10.1149/2.013304jss
Publication status	Published - 2013
Externally published	Yes

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title = "Relaxed and strained patterned germanium-tin structures: A Raman scattering study",

abstract = "We report the first realization of fully-released and relaxed Ge 1-xSnx structures on Ge substrate. The coefficients of Raman peak shift a and b due to the alloy disorder and strain, respectively, were experimentally obtained for Ge1-xSnx. In addition, to lower the Sn composition needed to achieve direct bandgap Ge 1-xSnx alloys and also to realize channel materials with higher electron mobility, uniaxially tensile strained Ge1-xSn x patterns were fabricated. Large tensile strain (>1\%) was detected in the patterned Ge1-xSnx lines. Such tensile-strained Ge1-xSnx structures could enable the realization of Group-IV optoelectronic devices and high mobility n-channel transistors.",

author = "Ran Cheng and Wei Wang and Xiao Gong and Linfeng Sun and Pengfei Guo and Hailong Hu and Zexiang Shen and Genquan Han and Yeo, \{Yee Chia\}",

year = "2013",

doi = "10.1149/2.013304jss",

language = "English",

volume = "2",

pages = "P138--P145",

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publisher = "Electrochemical Society Inc.",

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T1 - Relaxed and strained patterned germanium-tin structures

T2 - A Raman scattering study

AU - Cheng, Ran

AU - Wang, Wei

AU - Gong, Xiao

AU - Sun, Linfeng

AU - Guo, Pengfei

AU - Hu, Hailong

AU - Shen, Zexiang

AU - Han, Genquan

AU - Yeo, Yee Chia

PY - 2013

Y1 - 2013

N2 - We report the first realization of fully-released and relaxed Ge 1-xSnx structures on Ge substrate. The coefficients of Raman peak shift a and b due to the alloy disorder and strain, respectively, were experimentally obtained for Ge1-xSnx. In addition, to lower the Sn composition needed to achieve direct bandgap Ge 1-xSnx alloys and also to realize channel materials with higher electron mobility, uniaxially tensile strained Ge1-xSn x patterns were fabricated. Large tensile strain (>1%) was detected in the patterned Ge1-xSnx lines. Such tensile-strained Ge1-xSnx structures could enable the realization of Group-IV optoelectronic devices and high mobility n-channel transistors.

AB - We report the first realization of fully-released and relaxed Ge 1-xSnx structures on Ge substrate. The coefficients of Raman peak shift a and b due to the alloy disorder and strain, respectively, were experimentally obtained for Ge1-xSnx. In addition, to lower the Sn composition needed to achieve direct bandgap Ge 1-xSnx alloys and also to realize channel materials with higher electron mobility, uniaxially tensile strained Ge1-xSn x patterns were fabricated. Large tensile strain (>1%) was detected in the patterned Ge1-xSnx lines. Such tensile-strained Ge1-xSnx structures could enable the realization of Group-IV optoelectronic devices and high mobility n-channel transistors.

UR - https://www.scopus.com/pages/publications/84881563975

U2 - 10.1149/2.013304jss

DO - 10.1149/2.013304jss

M3 - Article

AN - SCOPUS:84881563975

SN - 2162-8769

VL - 2

SP - P138-P145

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 4

ER -

Relaxed and strained patterned germanium-tin structures: A Raman scattering study

Abstract

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