Relationship between exciton recombination zone and applied voltage in organic light-emitting diodes

Jingang Hao; Zhenbo Deng; Shengyi Yang

doi:10.1016/j.displa.2006.01.001

Relationship between exciton recombination zone and applied voltage in organic light-emitting diodes

Jingang Hao, Zhenbo Deng^*, Shengyi Yang

^*Corresponding author for this work

Ministry of Education in China

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this paper, the relationship between exciton recombination zone and applied voltage in organic light-emitting diodes (OLEDs) ITO/NPB (40 nm)/Alq₃(w nm)/rubrene(3 nm)/Alq₃(50-w)/Al, in which a 3 nm rubrene as sensing layer is inserted in Alq₃ layer at different depth, is studied. By comparing the electroluminescence (EL) spectra of device driven under different applied voltages, a conclusion can be drawn that the recombination zone shifts logarithmically with increasing applied voltages.

Original language	English
Pages (from-to)	108-111
Number of pages	4
Journal	Displays
Volume	27
Issue number	3
DOIs	https://doi.org/10.1016/j.displa.2006.01.001
Publication status	Published - Jul 2006
Externally published	Yes

Keywords

OLED
Recombination zone
Sensing layer
Ultra-thin layer

Access to Document

10.1016/j.displa.2006.01.001

Cite this

@article{00c359e47279448e9fcdf53cd34ce459,

title = "Relationship between exciton recombination zone and applied voltage in organic light-emitting diodes",

abstract = "In this paper, the relationship between exciton recombination zone and applied voltage in organic light-emitting diodes (OLEDs) ITO/NPB (40 nm)/Alq3(w nm)/rubrene(3 nm)/Alq3(50-w)/Al, in which a 3 nm rubrene as sensing layer is inserted in Alq3 layer at different depth, is studied. By comparing the electroluminescence (EL) spectra of device driven under different applied voltages, a conclusion can be drawn that the recombination zone shifts logarithmically with increasing applied voltages.",

keywords = "OLED, Recombination zone, Sensing layer, Ultra-thin layer",

author = "Jingang Hao and Zhenbo Deng and Shengyi Yang",

year = "2006",

month = jul,

doi = "10.1016/j.displa.2006.01.001",

language = "English",

volume = "27",

pages = "108--111",

journal = "Displays",

issn = "0141-9382",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Relationship between exciton recombination zone and applied voltage in organic light-emitting diodes

AU - Hao, Jingang

AU - Deng, Zhenbo

AU - Yang, Shengyi

PY - 2006/7

Y1 - 2006/7

N2 - In this paper, the relationship between exciton recombination zone and applied voltage in organic light-emitting diodes (OLEDs) ITO/NPB (40 nm)/Alq3(w nm)/rubrene(3 nm)/Alq3(50-w)/Al, in which a 3 nm rubrene as sensing layer is inserted in Alq3 layer at different depth, is studied. By comparing the electroluminescence (EL) spectra of device driven under different applied voltages, a conclusion can be drawn that the recombination zone shifts logarithmically with increasing applied voltages.

AB - In this paper, the relationship between exciton recombination zone and applied voltage in organic light-emitting diodes (OLEDs) ITO/NPB (40 nm)/Alq3(w nm)/rubrene(3 nm)/Alq3(50-w)/Al, in which a 3 nm rubrene as sensing layer is inserted in Alq3 layer at different depth, is studied. By comparing the electroluminescence (EL) spectra of device driven under different applied voltages, a conclusion can be drawn that the recombination zone shifts logarithmically with increasing applied voltages.

KW - OLED

KW - Recombination zone

KW - Sensing layer

KW - Ultra-thin layer

UR - http://www.scopus.com/inward/record.url?scp=33745524962&partnerID=8YFLogxK

U2 - 10.1016/j.displa.2006.01.001

DO - 10.1016/j.displa.2006.01.001

M3 - Article

AN - SCOPUS:33745524962

SN - 0141-9382

VL - 27

SP - 108

EP - 111

JO - Displays

JF - Displays

IS - 3

ER -

Relationship between exciton recombination zone and applied voltage in organic light-emitting diodes

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this