Recent progress in 2D group-VA semiconductors: From theory to experiment

Shengli Zhang; Shiying Guo; Zhongfang Chen; Yeliang Wang; Hongjun Gao; Julio Gómez-Herrero; Pablo Ares; Félix Zamora; Zhen Zhu; Haibo Zeng

doi:10.1039/c7cs00125h

Recent progress in 2D group-VA semiconductors: From theory to experiment

Shengli Zhang
, Shiying Guo
, Zhongfang Chen
, Yeliang Wang
, Hongjun Gao
, Julio Gómez-Herrero
, Pablo Ares
, Félix Zamora^*
, Zhen Zhu
, Haibo Zeng

^*Corresponding author for this work

Nanjing University of Science and Technology
University of Puerto Rico
University of Chinese Academy of Sciences
Universidad Autónoma de Madrid
University of California at Santa Barbara

Research output: Contribution to journal › Review article › peer-review

817 Citations (Scopus)

Abstract

Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.

Original language	English
Pages (from-to)	982-1021
Number of pages	40
Journal	Chemical Society Reviews
Volume	47
Issue number	3
DOIs	https://doi.org/10.1039/c7cs00125h
Publication status	Published - 7 Feb 2018
Externally published	Yes

Access to Document

10.1039/c7cs00125h

Cite this

@article{9ab9bcffb2e84ce3b719e2b771bcb974,

title = "Recent progress in 2D group-VA semiconductors: From theory to experiment",

abstract = "Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.",

author = "Shengli Zhang and Shiying Guo and Zhongfang Chen and Yeliang Wang and Hongjun Gao and Julio G{\'o}mez-Herrero and Pablo Ares and F{\'e}lix Zamora and Zhen Zhu and Haibo Zeng",

note = "Publisher Copyright: {\textcopyright} 2018 The Royal Society of Chemistry.",

year = "2018",

month = feb,

day = "7",

doi = "10.1039/c7cs00125h",

language = "English",

volume = "47",

pages = "982--1021",

journal = "Chemical Society Reviews",

issn = "0306-0012",

publisher = "Royal Society of Chemistry",

number = "3",

}

TY - JOUR

T1 - Recent progress in 2D group-VA semiconductors

T2 - From theory to experiment

AU - Zhang, Shengli

AU - Guo, Shiying

AU - Chen, Zhongfang

AU - Wang, Yeliang

AU - Gao, Hongjun

AU - Gómez-Herrero, Julio

AU - Ares, Pablo

AU - Zamora, Félix

AU - Zhu, Zhen

AU - Zeng, Haibo

PY - 2018/2/7

Y1 - 2018/2/7

N2 - Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.

AB - Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.

UR - https://www.scopus.com/pages/publications/85041686378

U2 - 10.1039/c7cs00125h

DO - 10.1039/c7cs00125h

M3 - Review article

C2 - 29210397

AN - SCOPUS:85041686378

SN - 0306-0012

VL - 47

SP - 982

EP - 1021

JO - Chemical Society Reviews

JF - Chemical Society Reviews

IS - 3

ER -

Recent progress in 2D group-VA semiconductors: From theory to experiment

Abstract

Access to Document

Other files and links

Fingerprint

Cite this