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Recent progress and challenges of infrared quantum dots

  • Yin Hu
  • , Kaiyao Xin
  • , Siqi Qiu
  • , Jianwen Hu
  • , Pan Wang
  • , Shenqiang Zhai
  • , Guozhen Shen
  • , Juehan Yang*
  • , Zhongming Wei*
  • *Corresponding author for this work
  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Institute of Technology

Research output: Contribution to journalReview articlepeer-review

Abstract

This review explores the recent advancements in the field of infrared quantum dot (QD) materials, focusing on their synthesis, characterization, and applications. In recent years, precise control of the physical size and modulation of the chemical components in QDs has enabled efficient and tunable photoelectric properties. The distinctive emission and absorption properties of infrared QDs indicate their importance across diverse applications. This review covers the fundamental physical properties of QDs; elucidates their regulatory mechanisms; discusses their synthesis methods; and explores their applications in photodetectors, light-emitting diodes, lasers, photovoltaic devices, and others. Finally, it addresses existing challenges and outlines prospective future opportunities in the field of infrared QD technology.

Original languageEnglish
Article number181401
JournalScience China Information Sciences
Volume68
Issue number8
DOIs
Publication statusPublished - Aug 2025
Externally publishedYes

Keywords

  • colloidal quantum dots
  • infrared optoelectronics
  • infrared photodetector
  • infrared quantum dots
  • physical properties

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