TY - GEN
T1 - Realization of Terahertz Linearly and Circularly Polarized Antipodal Tapered Slot Antennas Based on Bulk-Silicon Process
AU - Guo, Yinadong
AU - Lu, Hongda
AU - Liu, Yonz
AU - Li, Bin
AU - Lv, Xin
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/12/5
Y1 - 2018/12/5
N2 - Antipodal Tapered Slot Antennas (ATSAs) with different polarizations are proposed in this paper. The two kinds of terahertz ATSAs are manufactured based on bulk-silicon process. The ATSAs are composed of an antipodal tapered slots structure and a WR2.2 feeding waveguide, monolithically fabricated by deep reactive-ion etching, sputtering gold and gold-gold thermo-compression bonding. By changing the form of etching curves, the linearly and circularly polarized ATSAs are achieved. The ATSAs realize the pencil beam on the flat aperture, with good symmetry of radiation patterns and high gain, which are suitable for the fields of imaging, detection and wireless communication systems. The good consistency of simulation and test indicates that the bulk silicon process can be applied in small size with high accuracy and meets the processing requirements of the terahertz band.
AB - Antipodal Tapered Slot Antennas (ATSAs) with different polarizations are proposed in this paper. The two kinds of terahertz ATSAs are manufactured based on bulk-silicon process. The ATSAs are composed of an antipodal tapered slots structure and a WR2.2 feeding waveguide, monolithically fabricated by deep reactive-ion etching, sputtering gold and gold-gold thermo-compression bonding. By changing the form of etching curves, the linearly and circularly polarized ATSAs are achieved. The ATSAs realize the pencil beam on the flat aperture, with good symmetry of radiation patterns and high gain, which are suitable for the fields of imaging, detection and wireless communication systems. The good consistency of simulation and test indicates that the bulk silicon process can be applied in small size with high accuracy and meets the processing requirements of the terahertz band.
UR - https://www.scopus.com/pages/publications/85060248397
U2 - 10.1109/ICMMT.2018.8563505
DO - 10.1109/ICMMT.2018.8563505
M3 - Conference contribution
AN - SCOPUS:85060248397
T3 - 2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings
BT - 2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 10th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018
Y2 - 6 May 2018 through 9 May 2018
ER -