Abstract
The switching mechanism of valence change memories involves the migration, accumulation and rearrangement of oxygen vacancies within a dielectric medium to change the electrical conductivity, and is triggered by an external applied potential. Here, resistive switches are constructed to exploit the high sensitivity to morphology at tightlyconfined plasmonic hotspots within the switching material. This gives a non-destructive technique to detect oxygen vacancy motion with nm-scale sensitivity using visible light.
| Original language | English |
|---|---|
| Pages (from-to) | 1421-1422 |
| Number of pages | 2 |
| Journal | International Conference on Metamaterials, Photonic Crystals and Plasmonics |
| Publication status | Published - 2019 |
| Externally published | Yes |
| Event | 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2019 - Lisbon, Portugal Duration: 23 Jul 2019 → 26 Jul 2019 |
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