Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition

The m-plane-oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates at 450 C, using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and <101Ì...0> orientation of the nanoplates were confirmed using high-resolution electron microscopes. GaN nanoplates served as seed crystals for the subsequent growth of m-plane-oriented interlinked GaN nanoplates at a longer growth time. The strong A₁ (TO) mode in Raman spectra and the (101Ì...0) peak in X-ray diffraction confirmed the m plane orientation of the nanoplates. The interlinked GaN nanoplates showed a high-growth rate of ∼38 μm/h. The results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane-oriented GaN nanoplates on the Si substrates at low-growth temperatures.