Quantum efficiency enhancement for PtSi infrared detector by surface plasma waves

Bing Xin Kang; Hua Gao Li; Ling Xue Wang; Ping Xiong; Hong Bing Chen; Li Li; Yi Cai

doi:10.11972/j.issn.1001-9014.2016.05.008

Quantum efficiency enhancement for PtSi infrared detector by surface plasma waves

Bing Xin Kang, Hua Gao Li, Ling Xue Wang^*, Ping Xiong, Hong Bing Chen, Li Li, Yi Cai

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

To enhance quantum efficiency of infrared detectors made of PtSi Schottky barrier, the flat interface of PtSi/p-silicon metal semiconductor was modified to a grating structure. The incident radiation can be coupled with the surface plasma waves within this structure, thus to improve the optical coupling efficiency of the PtSi infrared detector. Based on rigorous coupled-wave analysis method, parameters of the grating structure were optimized and electric field distributions at resonant wavelength were simulated. The quantitative relationship between the optical coupling efficiency and quantum efficiency of PtSi Schottky barrier infrared detector was discussed. Comparing with the flat structure, the average quantum efficiency is evenly increased twice in 3~5 μm wavelength range, and approximately 2.94 and 2.5 times at 3 μm and 3.4 μm, respectively.

Original language	English
Pages (from-to)	550-556
Number of pages	7
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	35
Issue number	5
DOIs	https://doi.org/10.11972/j.issn.1001-9014.2016.05.008
Publication status	Published - 1 Oct 2016

Keywords

Grating coupling
PtSi infrared detector
Quantum efficiency
Surface plasma waves

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10.11972/j.issn.1001-9014.2016.05.008

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title = "Quantum efficiency enhancement for PtSi infrared detector by surface plasma waves",

abstract = "To enhance quantum efficiency of infrared detectors made of PtSi Schottky barrier, the flat interface of PtSi/p-silicon metal semiconductor was modified to a grating structure. The incident radiation can be coupled with the surface plasma waves within this structure, thus to improve the optical coupling efficiency of the PtSi infrared detector. Based on rigorous coupled-wave analysis method, parameters of the grating structure were optimized and electric field distributions at resonant wavelength were simulated. The quantitative relationship between the optical coupling efficiency and quantum efficiency of PtSi Schottky barrier infrared detector was discussed. Comparing with the flat structure, the average quantum efficiency is evenly increased twice in 3~5 μm wavelength range, and approximately 2.94 and 2.5 times at 3 μm and 3.4 μm, respectively.",

keywords = "Grating coupling, PtSi infrared detector, Quantum efficiency, Surface plasma waves",

author = "Kang, {Bing Xin} and Li, {Hua Gao} and Wang, {Ling Xue} and Ping Xiong and Chen, {Hong Bing} and Li Li and Yi Cai",

year = "2016",

month = oct,

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doi = "10.11972/j.issn.1001-9014.2016.05.008",

language = "English",

volume = "35",

pages = "550--556",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

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}

TY - JOUR

T1 - Quantum efficiency enhancement for PtSi infrared detector by surface plasma waves

AU - Kang, Bing Xin

AU - Li, Hua Gao

AU - Wang, Ling Xue

AU - Xiong, Ping

AU - Chen, Hong Bing

AU - Li, Li

AU - Cai, Yi

PY - 2016/10/1

Y1 - 2016/10/1

N2 - To enhance quantum efficiency of infrared detectors made of PtSi Schottky barrier, the flat interface of PtSi/p-silicon metal semiconductor was modified to a grating structure. The incident radiation can be coupled with the surface plasma waves within this structure, thus to improve the optical coupling efficiency of the PtSi infrared detector. Based on rigorous coupled-wave analysis method, parameters of the grating structure were optimized and electric field distributions at resonant wavelength were simulated. The quantitative relationship between the optical coupling efficiency and quantum efficiency of PtSi Schottky barrier infrared detector was discussed. Comparing with the flat structure, the average quantum efficiency is evenly increased twice in 3~5 μm wavelength range, and approximately 2.94 and 2.5 times at 3 μm and 3.4 μm, respectively.

AB - To enhance quantum efficiency of infrared detectors made of PtSi Schottky barrier, the flat interface of PtSi/p-silicon metal semiconductor was modified to a grating structure. The incident radiation can be coupled with the surface plasma waves within this structure, thus to improve the optical coupling efficiency of the PtSi infrared detector. Based on rigorous coupled-wave analysis method, parameters of the grating structure were optimized and electric field distributions at resonant wavelength were simulated. The quantitative relationship between the optical coupling efficiency and quantum efficiency of PtSi Schottky barrier infrared detector was discussed. Comparing with the flat structure, the average quantum efficiency is evenly increased twice in 3~5 μm wavelength range, and approximately 2.94 and 2.5 times at 3 μm and 3.4 μm, respectively.

KW - Grating coupling

KW - PtSi infrared detector

KW - Quantum efficiency

KW - Surface plasma waves

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U2 - 10.11972/j.issn.1001-9014.2016.05.008

DO - 10.11972/j.issn.1001-9014.2016.05.008

M3 - Article

AN - SCOPUS:84992093333

SN - 1001-9014

VL - 35

SP - 550

EP - 556

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 5

ER -

Quantum efficiency enhancement for PtSi infrared detector by surface plasma waves

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